Silicon UV flame detector utilizing photonic crystal
Само за регистроване кориснике
1999
Аутори
Đurić, ZoranDankovic, Tatjana
Jakšić, Zoran
Randjelović, Danijela
Petrovic, Radomir
Wolfgang, Ehrfeld
Schmidt, Andreas
Hecker, Klaus
Конференцијски прилог (Објављена верзија)
,
Society of Photo-Optical Instrumentation Engineers (SPIE)
Метаподаци
Приказ свих података о документуАпстракт
Abstract
In this paper we propose a silicon UV flame detector for combustion systems. In gas burners the relative intensity of flame radiation is dominant in the ultraviolet region (below 0.35 μm). In the visible and infrared regions the relative intensity of radiation of the incandescent surfaces (black body) is several orders of magnitude greater than the gas flame radiation intensity. Therefore it is required that the flame detector has a much greater sensitivity in the ultraviolet region. The proposed detector is formed on n-type silicon on isolator wafer. In order to suppress sensitivity in the visible and the IR regions, the absorption region of the detector is greatly reduced, and a UV filter utilizing photonic crystal is designed. The p-n junctions are formed by very shallow diffusion of impurities. The contacts are made after the deposition of a thin oxide layer. The UV filter is then sputtered on the detector surface. The filter consists of a thin silver film (protected by M...gF2), and a one-dimensional photonic crystal made of twelve pairs of NaF/Y2O3 layers. The photonic band gaps of the crystal should suppress the propagation of the light with wavelengths greater than 0.35 μm. For the detector active area of 5 mm2, the thickness of the silver layer of 0.13 μm and a dark current of 1 nA, the noise equivalent power at 0.32 μm is 4.23·10-13W/Hz1/2. The calculated flame signal to total signal ratio is 0.52.
Кључне речи:
Crystal impurities / Crystals / Flame research / Heterojunctions / Light absorption / Metallic films / Optical filters / Sensitivity analysis / Silicon wafers / Silver / Thermal diffusion in solids / Thin films / Gas flame radiation intensity / Photonic crystals / Silicon ultraviolet flame detectorsИзвор:
Proceedings of SPIE - The International Society for Optical Engineering, Proceedings of the 1999 Design, Test, and Microfabrication of MEMS and MOEMS, 1999, 3680, II, 601-610Издавач:
- Society of Photo-Optical Instrumentation Engineers
Финансирање / пројекти:
- Volkswagen Foundation within the framework of the project I/72 957
Институција/група
IHTMTY - CONF AU - Đurić, Zoran AU - Dankovic, Tatjana AU - Jakšić, Zoran AU - Randjelović, Danijela AU - Petrovic, Radomir AU - Wolfgang, Ehrfeld AU - Schmidt, Andreas AU - Hecker, Klaus PY - 1999 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/6840 AB - Abstract In this paper we propose a silicon UV flame detector for combustion systems. In gas burners the relative intensity of flame radiation is dominant in the ultraviolet region (below 0.35 μm). In the visible and infrared regions the relative intensity of radiation of the incandescent surfaces (black body) is several orders of magnitude greater than the gas flame radiation intensity. Therefore it is required that the flame detector has a much greater sensitivity in the ultraviolet region. The proposed detector is formed on n-type silicon on isolator wafer. In order to suppress sensitivity in the visible and the IR regions, the absorption region of the detector is greatly reduced, and a UV filter utilizing photonic crystal is designed. The p-n junctions are formed by very shallow diffusion of impurities. The contacts are made after the deposition of a thin oxide layer. The UV filter is then sputtered on the detector surface. The filter consists of a thin silver film (protected by MgF2), and a one-dimensional photonic crystal made of twelve pairs of NaF/Y2O3 layers. The photonic band gaps of the crystal should suppress the propagation of the light with wavelengths greater than 0.35 μm. For the detector active area of 5 mm2, the thickness of the silver layer of 0.13 μm and a dark current of 1 nA, the noise equivalent power at 0.32 μm is 4.23·10-13W/Hz1/2. The calculated flame signal to total signal ratio is 0.52. PB - Society of Photo-Optical Instrumentation Engineers C3 - Proceedings of SPIE - The International Society for Optical Engineering, Proceedings of the 1999 Design, Test, and Microfabrication of MEMS and MOEMS T1 - Silicon UV flame detector utilizing photonic crystal VL - 3680 IS - II SP - 601 EP - 610 DO - 10.1117/12.341251 ER -
@conference{ author = "Đurić, Zoran and Dankovic, Tatjana and Jakšić, Zoran and Randjelović, Danijela and Petrovic, Radomir and Wolfgang, Ehrfeld and Schmidt, Andreas and Hecker, Klaus", year = "1999", abstract = "Abstract In this paper we propose a silicon UV flame detector for combustion systems. In gas burners the relative intensity of flame radiation is dominant in the ultraviolet region (below 0.35 μm). In the visible and infrared regions the relative intensity of radiation of the incandescent surfaces (black body) is several orders of magnitude greater than the gas flame radiation intensity. Therefore it is required that the flame detector has a much greater sensitivity in the ultraviolet region. The proposed detector is formed on n-type silicon on isolator wafer. In order to suppress sensitivity in the visible and the IR regions, the absorption region of the detector is greatly reduced, and a UV filter utilizing photonic crystal is designed. The p-n junctions are formed by very shallow diffusion of impurities. The contacts are made after the deposition of a thin oxide layer. The UV filter is then sputtered on the detector surface. The filter consists of a thin silver film (protected by MgF2), and a one-dimensional photonic crystal made of twelve pairs of NaF/Y2O3 layers. The photonic band gaps of the crystal should suppress the propagation of the light with wavelengths greater than 0.35 μm. For the detector active area of 5 mm2, the thickness of the silver layer of 0.13 μm and a dark current of 1 nA, the noise equivalent power at 0.32 μm is 4.23·10-13W/Hz1/2. The calculated flame signal to total signal ratio is 0.52.", publisher = "Society of Photo-Optical Instrumentation Engineers", journal = "Proceedings of SPIE - The International Society for Optical Engineering, Proceedings of the 1999 Design, Test, and Microfabrication of MEMS and MOEMS", title = "Silicon UV flame detector utilizing photonic crystal", volume = "3680", number = "II", pages = "601-610", doi = "10.1117/12.341251" }
Đurić, Z., Dankovic, T., Jakšić, Z., Randjelović, D., Petrovic, R., Wolfgang, E., Schmidt, A.,& Hecker, K.. (1999). Silicon UV flame detector utilizing photonic crystal. in Proceedings of SPIE - The International Society for Optical Engineering, Proceedings of the 1999 Design, Test, and Microfabrication of MEMS and MOEMS Society of Photo-Optical Instrumentation Engineers., 3680(II), 601-610. https://doi.org/10.1117/12.341251
Đurić Z, Dankovic T, Jakšić Z, Randjelović D, Petrovic R, Wolfgang E, Schmidt A, Hecker K. Silicon UV flame detector utilizing photonic crystal. in Proceedings of SPIE - The International Society for Optical Engineering, Proceedings of the 1999 Design, Test, and Microfabrication of MEMS and MOEMS. 1999;3680(II):601-610. doi:10.1117/12.341251 .
Đurić, Zoran, Dankovic, Tatjana, Jakšić, Zoran, Randjelović, Danijela, Petrovic, Radomir, Wolfgang, Ehrfeld, Schmidt, Andreas, Hecker, Klaus, "Silicon UV flame detector utilizing photonic crystal" in Proceedings of SPIE - The International Society for Optical Engineering, Proceedings of the 1999 Design, Test, and Microfabrication of MEMS and MOEMS, 3680, no. II (1999):601-610, https://doi.org/10.1117/12.341251 . .