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dc.creatorNikolic, P. M.
dc.creatorVujatovic, S. S.
dc.creatorParaskevopoulos, Konstantinos M.
dc.creatorPavlidou, E.
dc.creatorZorba, T. T.
dc.creatorIvetic, T.
dc.creatorCvetković, Olga
dc.creatorAleksić, Obrad S.
dc.creatorBlagojevic, V.
dc.creatorNikolić, Vesna
dc.date.accessioned2019-01-30T17:22:42Z
dc.date.available2019-01-30T17:22:42Z
dc.date.issued2010
dc.identifier.issn1842-6573
dc.identifier.urihttps://cer.ihtm.bg.ac.rs/handle/123456789/647
dc.description.abstractSingle crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg.en
dc.publisherNational Institute of Optoelectronics
dc.relationinfo:eu-repo/grantAgreement/MESTD/MPN2006-2010/142011/RS//
dc.rightsopenAccess
dc.sourceOptoelectronics and Advanced Materials, Rapid Communications
dc.subjectPbTeen
dc.subjectInfrareden
dc.subjectAg-dopingen
dc.subjectHg-dopingen
dc.titleFar infrared properties of PbTe doped with Hgen
dc.typearticle
dc.rights.licenseARR
dcterms.abstractПавлидоу, Е.; Николиц, П. М.; Цветковић, Олга; Николиц, М. Весна; Зорба, Т. Т.; Параскевопоулос, К. М.; Благојевиц, В.; Иветиц, Т.; Вујатовиц, С. С.; Aлексић, Обрад С.;
dc.citation.volume4
dc.citation.issue2
dc.citation.spage151
dc.citation.epage153
dc.citation.other4(2): 151-153
dc.citation.rankM23
dc.identifier.rcubConv_2491
dc.identifier.rcubhttps://hdl.handle.net/21.15107/rcub_dais_3433
dc.identifier.fulltexthttps://cer.ihtm.bg.ac.rs/bitstream/id/14887/2NIKOLIC.pdf
dc.identifier.scopus2-s2.0-77952056143
dc.identifier.wos000275660400009
dc.type.versionpublishedVersion


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