Far infrared properties of PbTe doped with Hg
Аутори
Nikolic, P. M.Vujatovic, S. S.
Paraskevopoulos, Konstantinos M.
Pavlidou, E.
Zorba, T. T.
Ivetic, T.
Cvetković, Olga
Aleksić, Obrad S.
Blagojevic, V.
Nikolić, Vesna
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg.
Кључне речи:
PbTe / Infrared / Ag-doping / Hg-dopingИзвор:
Optoelectronics and Advanced Materials, Rapid Communications, 2010, 4, 2, 151-153Издавач:
- National Institute of Optoelectronics
Финансирање / пројекти:
- Проучавање међузависности у тријади ''синтеза-структура-својства'' за функционалне материјала (RS-142011)
Институција/група
IHTMTY - JOUR AU - Nikolic, P. M. AU - Vujatovic, S. S. AU - Paraskevopoulos, Konstantinos M. AU - Pavlidou, E. AU - Zorba, T. T. AU - Ivetic, T. AU - Cvetković, Olga AU - Aleksić, Obrad S. AU - Blagojevic, V. AU - Nikolić, Vesna PY - 2010 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/647 AB - Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg. PB - National Institute of Optoelectronics T2 - Optoelectronics and Advanced Materials, Rapid Communications T1 - Far infrared properties of PbTe doped with Hg VL - 4 IS - 2 SP - 151 EP - 153 UR - https://hdl.handle.net/21.15107/rcub_dais_3433 ER -
@article{ author = "Nikolic, P. M. and Vujatovic, S. S. and Paraskevopoulos, Konstantinos M. and Pavlidou, E. and Zorba, T. T. and Ivetic, T. and Cvetković, Olga and Aleksić, Obrad S. and Blagojevic, V. and Nikolić, Vesna", year = "2010", abstract = "Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg.", publisher = "National Institute of Optoelectronics", journal = "Optoelectronics and Advanced Materials, Rapid Communications", title = "Far infrared properties of PbTe doped with Hg", volume = "4", number = "2", pages = "151-153", url = "https://hdl.handle.net/21.15107/rcub_dais_3433" }
Nikolic, P. M., Vujatovic, S. S., Paraskevopoulos, K. M., Pavlidou, E., Zorba, T. T., Ivetic, T., Cvetković, O., Aleksić, O. S., Blagojevic, V.,& Nikolić, V.. (2010). Far infrared properties of PbTe doped with Hg. in Optoelectronics and Advanced Materials, Rapid Communications National Institute of Optoelectronics., 4(2), 151-153. https://hdl.handle.net/21.15107/rcub_dais_3433
Nikolic PM, Vujatovic SS, Paraskevopoulos KM, Pavlidou E, Zorba TT, Ivetic T, Cvetković O, Aleksić OS, Blagojevic V, Nikolić V. Far infrared properties of PbTe doped with Hg. in Optoelectronics and Advanced Materials, Rapid Communications. 2010;4(2):151-153. https://hdl.handle.net/21.15107/rcub_dais_3433 .
Nikolic, P. M., Vujatovic, S. S., Paraskevopoulos, Konstantinos M., Pavlidou, E., Zorba, T. T., Ivetic, T., Cvetković, Olga, Aleksić, Obrad S., Blagojevic, V., Nikolić, Vesna, "Far infrared properties of PbTe doped with Hg" in Optoelectronics and Advanced Materials, Rapid Communications, 4, no. 2 (2010):151-153, https://hdl.handle.net/21.15107/rcub_dais_3433 .