Far infrared properties of PbTe doped with Hg
Authors
Nikolic, P. M.Vujatovic, S. S.
Paraskevopoulos, Konstantinos M.
Pavlidou, E.
Zorba, T. T.
Ivetic, T.
Cvetković, Olga

Aleksić, Obrad S.
Blagojevic, V.
Nikolić, Vesna
Article (Published version)

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Show full item recordAbstract
Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg.
Keywords:
PbTe / Infrared / Ag-doping / Hg-dopingSource:
Optoelectronics and Advanced Materials, Rapid Communications, 2010, 4, 2, 151-153Publisher:
- National Institute of Optoelectronics
Funding / projects:
- Investigation of the relation in triad: Synthesis structure-properties for functional materials (RS-142011)
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IHTMTY - JOUR AU - Nikolic, P. M. AU - Vujatovic, S. S. AU - Paraskevopoulos, Konstantinos M. AU - Pavlidou, E. AU - Zorba, T. T. AU - Ivetic, T. AU - Cvetković, Olga AU - Aleksić, Obrad S. AU - Blagojevic, V. AU - Nikolić, Vesna PY - 2010 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/647 AB - Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg. PB - National Institute of Optoelectronics T2 - Optoelectronics and Advanced Materials, Rapid Communications T1 - Far infrared properties of PbTe doped with Hg VL - 4 IS - 2 SP - 151 EP - 153 UR - https://hdl.handle.net/21.15107/rcub_dais_3433 ER -
@article{ author = "Nikolic, P. M. and Vujatovic, S. S. and Paraskevopoulos, Konstantinos M. and Pavlidou, E. and Zorba, T. T. and Ivetic, T. and Cvetković, Olga and Aleksić, Obrad S. and Blagojevic, V. and Nikolić, Vesna", year = "2010", abstract = "Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg.", publisher = "National Institute of Optoelectronics", journal = "Optoelectronics and Advanced Materials, Rapid Communications", title = "Far infrared properties of PbTe doped with Hg", volume = "4", number = "2", pages = "151-153", url = "https://hdl.handle.net/21.15107/rcub_dais_3433" }
Nikolic, P. M., Vujatovic, S. S., Paraskevopoulos, K. M., Pavlidou, E., Zorba, T. T., Ivetic, T., Cvetković, O., Aleksić, O. S., Blagojevic, V.,& Nikolić, V.. (2010). Far infrared properties of PbTe doped with Hg. in Optoelectronics and Advanced Materials, Rapid Communications National Institute of Optoelectronics., 4(2), 151-153. https://hdl.handle.net/21.15107/rcub_dais_3433
Nikolic PM, Vujatovic SS, Paraskevopoulos KM, Pavlidou E, Zorba TT, Ivetic T, Cvetković O, Aleksić OS, Blagojevic V, Nikolić V. Far infrared properties of PbTe doped with Hg. in Optoelectronics and Advanced Materials, Rapid Communications. 2010;4(2):151-153. https://hdl.handle.net/21.15107/rcub_dais_3433 .
Nikolic, P. M., Vujatovic, S. S., Paraskevopoulos, Konstantinos M., Pavlidou, E., Zorba, T. T., Ivetic, T., Cvetković, Olga, Aleksić, Obrad S., Blagojevic, V., Nikolić, Vesna, "Far infrared properties of PbTe doped with Hg" in Optoelectronics and Advanced Materials, Rapid Communications, 4, no. 2 (2010):151-153, https://hdl.handle.net/21.15107/rcub_dais_3433 .