Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg.
Keywords:
PbTe / Infrared / Ag-doping / Hg-doping
Source:
Optoelectronics and Advanced Materials, Rapid Communications, 2010, 4, 2, 151-153
TY - JOUR
AU - Nikolic, P. M.
AU - Vujatovic, S. S.
AU - Paraskevopoulos, Konstantinos M.
AU - Pavlidou, E.
AU - Zorba, T. T.
AU - Ivetic, T.
AU - Cvetković, Olga
AU - Aleksić, Obrad S.
AU - Blagojevic, V.
AU - Nikolić, Vesna
PY - 2010
UR - https://cer.ihtm.bg.ac.rs/handle/123456789/647
AB - Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg.
PB - National Institute of Optoelectronics
T2 - Optoelectronics and Advanced Materials, Rapid Communications
T1 - Far infrared properties of PbTe doped with Hg
VL - 4
IS - 2
SP - 151
EP - 153
UR - https://hdl.handle.net/21.15107/rcub_dais_3433
ER -
@article{
author = "Nikolic, P. M. and Vujatovic, S. S. and Paraskevopoulos, Konstantinos M. and Pavlidou, E. and Zorba, T. T. and Ivetic, T. and Cvetković, Olga and Aleksić, Obrad S. and Blagojevic, V. and Nikolić, Vesna",
year = "2010",
abstract = "Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg.",
publisher = "National Institute of Optoelectronics",
journal = "Optoelectronics and Advanced Materials, Rapid Communications",
title = "Far infrared properties of PbTe doped with Hg",
volume = "4",
number = "2",
pages = "151-153",
url = "https://hdl.handle.net/21.15107/rcub_dais_3433"
}
Nikolic, P. M., Vujatovic, S. S., Paraskevopoulos, K. M., Pavlidou, E., Zorba, T. T., Ivetic, T., Cvetković, O., Aleksić, O. S., Blagojevic, V.,& Nikolić, V.. (2010). Far infrared properties of PbTe doped with Hg. in Optoelectronics and Advanced Materials, Rapid Communications
National Institute of Optoelectronics., 4(2), 151-153.
https://hdl.handle.net/21.15107/rcub_dais_3433
Nikolic PM, Vujatovic SS, Paraskevopoulos KM, Pavlidou E, Zorba TT, Ivetic T, Cvetković O, Aleksić OS, Blagojevic V, Nikolić V. Far infrared properties of PbTe doped with Hg. in Optoelectronics and Advanced Materials, Rapid Communications. 2010;4(2):151-153.
https://hdl.handle.net/21.15107/rcub_dais_3433 .
Nikolic, P. M., Vujatovic, S. S., Paraskevopoulos, Konstantinos M., Pavlidou, E., Zorba, T. T., Ivetic, T., Cvetković, Olga, Aleksić, Obrad S., Blagojevic, V., Nikolić, Vesna, "Far infrared properties of PbTe doped with Hg" in Optoelectronics and Advanced Materials, Rapid Communications, 4, no. 2 (2010):151-153,
https://hdl.handle.net/21.15107/rcub_dais_3433 .
