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dc.creatorTodorović, Dragan M.
dc.creatorNikolić, Pantelija M.
dc.creatorBojičić, Aleksandar I.
dc.creatorVasiljević-Radović, Dana
dc.creatorRadulović, Katarina
dc.date.accessioned2023-02-26T17:57:28Z
dc.date.available2023-02-26T17:57:28Z
dc.date.issued2001
dc.identifier.issn0910-6340
dc.identifier.urihttps://cer.ihtm.bg.ac.rs/handle/123456789/5821
dc.description.abstractA model was derived in order to study the dependence of the photoacoustic signal on the thermal, elastic and carrier transport properties of two-layer samples. The various systems were considered: the conductor-semiconductor, the insulator-semiconductor and the semiconductor-semiconductor system. The semiconductor-semiconductor system is possible to take in consideration as a general configuration, where the other two are the special classes. In the following theoretical analysis, thermodiffusion, thermoelastic and electronic deformation contributions have been used in order to interpret the photoacoustic effect in a two-layer system.sr
dc.language.isoensr
dc.publisherThe Japan Society for Analytical Chemistrysr
dc.rightsopenAccesssr
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.sourceAnalytical Sciencessr
dc.subjectmodelsr
dc.subjectthermal propertiessr
dc.subjectelastic propertiessr
dc.subjecttransport propertiessr
dc.subjectsemiconductorssr
dc.titleThermoelastic and Electronic Deformation Components of Photoacoustic Signal in Two-layer Systemsr
dc.typearticlesr
dc.rights.licenseBYsr
dc.citation.volume17
dc.citation.spages137
dc.citation.epages140
dc.citation.rankM23
dc.description.otherSpecial Issue: Photoacoustic and Photothermal Phenomena--11th International Conference Kyoto, Japan June 2000sr
dc.identifier.doidoi.org/10.14891/analscisp.17icpp.0.s137.0
dc.identifier.fulltexthttp://cer.ihtm.bg.ac.rs/bitstream/id/23806/17icpp_s137.pdf
dc.type.versionpublishedVersionsr


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Приказ основних података о документу