A comparison of different convex corner compensation strucutures applicable in anisotropic wet chemical etching of {100} oriented silicon

Abstract

This paper presents fabrication of microcantilevers on {100} oriented Si substrate by bulk micromachining. Two types of CCC (Convex Corner Compensation) structures, namely ⟨100⟩ oriented simple beam and structure using symmetric rectangular blocks oriented in the ⟨110⟩ direction at the apex of the square peg have been analyzed. Etching solution has been KOH water solution (80 wt. %) at etching temperature of 80 o C. Detailed construction and etching behavior of both structures have been given and explained.