Anisotropy in the thermal and electronic properties for two directions of a thermal wave propagation in GeSe2 single crystal was investigated using the photoacoustic frequency transmission technique. First, the electric field of an incident polarized light beam was adjusted to be perpendicular to the "c" axis (El⊥c), and then parallel to it (El//c) . It is shown that there is an obvious difference in the PA amplitude and phase spectra of the same sample, for cases when El//c and El⊥c axis. The results for thermal diffusivity DT obtained by fitting procedure for these two orientations of the electric field with regard to the "c" axis, are calculated: DT//=1.1×10-2 and DT⊥=1.7×10-3 cm2/s, e.g. their ratio is 6.6. The electronic transport parameters are also given: the carrier ambipolar diffusion coefficient D//=1.5 cm2/s and D⊥=2.5 cm2/s.
TY - JOUR
AU - Nikolić, Pantelija M.
AU - Todorović, Dragan M.
AU - Vujatović, S.S.
AU - Djurić, Stevan
AU - Mihailović, P.
AU - Blagojević, V.
AU - Radulović, Katarina
AU - Bojičić, A.I.
AU - Vasiljević-Radović, Dana
AU - Elazar, Jovan
AU - Urošević, Dragan
PY - 1998
UR - https://cer.ihtm.bg.ac.rs/handle/123456789/5762
AB - Anisotropy in the thermal and electronic properties for two directions of a thermal wave propagation in GeSe2 single crystal was investigated using the photoacoustic frequency transmission technique. First, the electric field of an incident polarized light beam was adjusted to be perpendicular to the "c" axis (El⊥c), and then parallel to it (El//c) . It is shown that there is an obvious difference in the PA amplitude and phase spectra of the same sample, for cases when El//c and El⊥c axis. The results for thermal diffusivity DT obtained by fitting procedure for these two orientations of the electric field with regard to the "c" axis, are calculated: DT//=1.1×10-2 and DT⊥=1.7×10-3 cm2/s, e.g. their ratio is 6.6. The electronic transport parameters are also given: the carrier ambipolar diffusion coefficient D//=1.5 cm2/s and D⊥=2.5 cm2/s.
PB - The Japan Society of Applied Physics
T2 - Japanese Journal of Applied Physics
T1 - Anisotropy in Thermal and Electronic Properties of Single Crystal GeSe2 Obtained by the Photoacoustic Method
VL - 37
SP - 4925
EP - 4930
DO - 10.1143/JJAP.37.4925
ER -
@article{
author = "Nikolić, Pantelija M. and Todorović, Dragan M. and Vujatović, S.S. and Djurić, Stevan and Mihailović, P. and Blagojević, V. and Radulović, Katarina and Bojičić, A.I. and Vasiljević-Radović, Dana and Elazar, Jovan and Urošević, Dragan",
year = "1998",
abstract = "Anisotropy in the thermal and electronic properties for two directions of a thermal wave propagation in GeSe2 single crystal was investigated using the photoacoustic frequency transmission technique. First, the electric field of an incident polarized light beam was adjusted to be perpendicular to the "c" axis (El⊥c), and then parallel to it (El//c) . It is shown that there is an obvious difference in the PA amplitude and phase spectra of the same sample, for cases when El//c and El⊥c axis. The results for thermal diffusivity DT obtained by fitting procedure for these two orientations of the electric field with regard to the "c" axis, are calculated: DT//=1.1×10-2 and DT⊥=1.7×10-3 cm2/s, e.g. their ratio is 6.6. The electronic transport parameters are also given: the carrier ambipolar diffusion coefficient D//=1.5 cm2/s and D⊥=2.5 cm2/s.",
publisher = "The Japan Society of Applied Physics",
journal = "Japanese Journal of Applied Physics",
title = "Anisotropy in Thermal and Electronic Properties of Single Crystal GeSe2 Obtained by the Photoacoustic Method",
volume = "37",
pages = "4925-4930",
doi = "10.1143/JJAP.37.4925"
}
Nikolić, P. M., Todorović, D. M., Vujatović, S.S., Djurić, S., Mihailović, P., Blagojević, V., Radulović, K., Bojičić, A.I., Vasiljević-Radović, D., Elazar, J.,& Urošević, D.. (1998). Anisotropy in Thermal and Electronic Properties of Single Crystal GeSe2 Obtained by the Photoacoustic Method. in Japanese Journal of Applied Physics
The Japan Society of Applied Physics., 37, 4925-4930.
https://doi.org/10.1143/JJAP.37.4925
Nikolić PM, Todorović DM, Vujatović S, Djurić S, Mihailović P, Blagojević V, Radulović K, Bojičić A, Vasiljević-Radović D, Elazar J, Urošević D. Anisotropy in Thermal and Electronic Properties of Single Crystal GeSe2 Obtained by the Photoacoustic Method. in Japanese Journal of Applied Physics. 1998;37:4925-4930.
doi:10.1143/JJAP.37.4925 .
Nikolić, Pantelija M., Todorović, Dragan M., Vujatović, S.S., Djurić, Stevan, Mihailović, P., Blagojević, V., Radulović, Katarina, Bojičić, A.I., Vasiljević-Radović, Dana, Elazar, Jovan, Urošević, Dragan, "Anisotropy in Thermal and Electronic Properties of Single Crystal GeSe2 Obtained by the Photoacoustic Method" in Japanese Journal of Applied Physics, 37 (1998):4925-4930,
https://doi.org/10.1143/JJAP.37.4925 . .
