Thermoelastic and electronic strain contributions to the frequency transmission photoacousticeffect in semiconductors

dc.creator	Todorović, D.M.
dc.creator	Nikolić, P.M.
dc.creator	Bojičić, A.I.
dc.creator	Radulović, K.T.
dc.date.accessioned	2023-02-16T15:38:46Z
dc.date.available	2023-02-16T15:38:46Z
dc.date.issued	1997
dc.identifier.issn	1098-0121
dc.identifier.uri	https://cer.ihtm.bg.ac.rs/handle/123456789/5708
dc.description.abstract	The photoacoustic effect is investigated as a function of the modulation frequency in a transmission detection configuration for semiconductor samples. The theoretical model for this configuration is given for the thermal and elastic processes besides the carrier-transport characteristics. The dependence of the photoacoustic effect on thermodiffusion, thermoelastic, and electronic-transport parameters is identified. The experimental photoacoustic data for Si samples are tested and they exhibit satisfactory agreement with the theoretical model.	sr
dc.language.iso	en	sr
dc.publisher	The American Physical Society	sr
dc.rights	restrictedAccess	sr
dc.source	Phys. Rev. B	sr
dc.subject	photoacoustic effect	sr
dc.subject	modulation frequency	sr
dc.subject	semiconductors	sr
dc.title	Thermoelastic and electronic strain contributions to the frequency transmission photoacousticeffect in semiconductors	sr
dc.type	article	sr
dc.rights.license	ARR	sr
dc.citation.volume	55
dc.citation.issue	23
dc.citation.spage	15631
dc.citation.epage	15642
dc.identifier.doi	10.1103/PhysRevB.55.15631
dc.identifier.scopus	2-s2.0-0000454833
dc.type.version	publishedVersion	sr