Thermoelastic and electronic strain contributions to the frequency transmission photoacousticeffect in semiconductors
Само за регистроване кориснике
1997
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
The photoacoustic effect is investigated as a function of the modulation frequency in a transmission detection configuration for semiconductor samples. The theoretical model for this configuration is given for the thermal and elastic processes besides the carrier-transport characteristics. The dependence of the photoacoustic effect on thermodiffusion, thermoelastic, and electronic-transport parameters is identified. The experimental photoacoustic data for Si samples are tested and they exhibit satisfactory agreement with the theoretical model.
Кључне речи:
photoacoustic effect / modulation frequency / semiconductorsИзвор:
Phys. Rev. B, 1997, 55, 23, 15631-15642Издавач:
- The American Physical Society
Институција/група
IHTMTY - JOUR AU - Todorović, D.M. AU - Nikolić, P.M. AU - Bojičić, A.I. AU - Radulović, K.T. PY - 1997 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/5708 AB - The photoacoustic effect is investigated as a function of the modulation frequency in a transmission detection configuration for semiconductor samples. The theoretical model for this configuration is given for the thermal and elastic processes besides the carrier-transport characteristics. The dependence of the photoacoustic effect on thermodiffusion, thermoelastic, and electronic-transport parameters is identified. The experimental photoacoustic data for Si samples are tested and they exhibit satisfactory agreement with the theoretical model. PB - The American Physical Society T2 - Phys. Rev. B T1 - Thermoelastic and electronic strain contributions to the frequency transmission photoacousticeffect in semiconductors VL - 55 IS - 23 SP - 15631 EP - 15642 DO - 10.1103/PhysRevB.55.15631 ER -
@article{ author = "Todorović, D.M. and Nikolić, P.M. and Bojičić, A.I. and Radulović, K.T.", year = "1997", abstract = "The photoacoustic effect is investigated as a function of the modulation frequency in a transmission detection configuration for semiconductor samples. The theoretical model for this configuration is given for the thermal and elastic processes besides the carrier-transport characteristics. The dependence of the photoacoustic effect on thermodiffusion, thermoelastic, and electronic-transport parameters is identified. The experimental photoacoustic data for Si samples are tested and they exhibit satisfactory agreement with the theoretical model.", publisher = "The American Physical Society", journal = "Phys. Rev. B", title = "Thermoelastic and electronic strain contributions to the frequency transmission photoacousticeffect in semiconductors", volume = "55", number = "23", pages = "15631-15642", doi = "10.1103/PhysRevB.55.15631" }
Todorović, D.M., Nikolić, P.M., Bojičić, A.I.,& Radulović, K.T.. (1997). Thermoelastic and electronic strain contributions to the frequency transmission photoacousticeffect in semiconductors. in Phys. Rev. B The American Physical Society., 55(23), 15631-15642. https://doi.org/10.1103/PhysRevB.55.15631
Todorović D, Nikolić P, Bojičić A, Radulović K. Thermoelastic and electronic strain contributions to the frequency transmission photoacousticeffect in semiconductors. in Phys. Rev. B. 1997;55(23):15631-15642. doi:10.1103/PhysRevB.55.15631 .
Todorović, D.M., Nikolić, P.M., Bojičić, A.I., Radulović, K.T., "Thermoelastic and electronic strain contributions to the frequency transmission photoacousticeffect in semiconductors" in Phys. Rev. B, 55, no. 23 (1997):15631-15642, https://doi.org/10.1103/PhysRevB.55.15631 . .