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A Contribution of Carrier Transport Processes to the Photoacoustic Effects in Doped Narrow Gap Semiconductors

Authorized Users Only
2003
Authors
Radulović, Katarina
Nikolić, Pantelija M.
Vasiljević-Radović, Dana
Todorović, Dragan
Vujatović, Stevan S.
Bojičić, A. I.
Blagojević, Vladimir
Urošević, Dragan
Article (Published version)
Metadata
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Abstract
The contribution of free carrier transport processes to the photoacoustic effect in doped AIVBVI compounds was investigated using the photoacoustic (PA) frequency modulated transmission technique as a valuable tool in the study of thermal and carrier transport processes in semiconductors. The PA signals were measured and analyzed as a function of the modulation frequency in a specially constructed PA cell. The multiparametric fitting procedure was used to obtain some thermal and electronic transport parameters of doped and pure AIVBVI compounds.
Keywords:
photoacoustic effect / semiconductors
Source:
Review of Scientific Instruments, 2003, 74, 1, 595-597
Publisher:
  • American Institute of Physics
Funding / projects:
  • Ministry of Sciences, Technologies and Development, Republic of Serbia Grant No. I.T.1.04.0062.B

DOI: 10.1063/1.1515891

ISSN: 0034-6748

Scopus: 2-s2.0-0037283846
[ Google Scholar ]
2
URI
https://cer.ihtm.bg.ac.rs/handle/123456789/5692
Collections
  • Radovi istraživača pre dolaska u IHTM / Researchers' papers before joining ICTM
Institution/Community
IHTM
TY  - JOUR
AU  - Radulović, Katarina
AU  - Nikolić, Pantelija M.
AU  - Vasiljević-Radović, Dana
AU  - Todorović, Dragan
AU  - Vujatović, Stevan S.
AU  - Bojičić, A. I.
AU  - Blagojević, Vladimir
AU  - Urošević, Dragan
PY  - 2003
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5692
AB  - The contribution of free carrier transport processes to the photoacoustic effect in doped AIVBVI compounds was investigated using the photoacoustic (PA) frequency modulated transmission technique as a valuable tool in the study of thermal and carrier transport processes in semiconductors. The PA signals were measured and analyzed as a function of the modulation frequency in a specially constructed PA cell. The multiparametric fitting procedure was used to obtain some thermal and electronic transport parameters of doped and pure AIVBVI compounds.
PB  - American Institute of Physics
T2  - Review of Scientific Instruments
T1  - A Contribution of Carrier Transport Processes to the Photoacoustic Effects in Doped Narrow Gap Semiconductors
VL  - 74
IS  - 1
SP  - 595
EP  - 597
DO  - 10.1063/1.1515891
ER  - 
@article{
author = "Radulović, Katarina and Nikolić, Pantelija M. and Vasiljević-Radović, Dana and Todorović, Dragan and Vujatović, Stevan S. and Bojičić, A. I. and Blagojević, Vladimir and Urošević, Dragan",
year = "2003",
abstract = "The contribution of free carrier transport processes to the photoacoustic effect in doped AIVBVI compounds was investigated using the photoacoustic (PA) frequency modulated transmission technique as a valuable tool in the study of thermal and carrier transport processes in semiconductors. The PA signals were measured and analyzed as a function of the modulation frequency in a specially constructed PA cell. The multiparametric fitting procedure was used to obtain some thermal and electronic transport parameters of doped and pure AIVBVI compounds.",
publisher = "American Institute of Physics",
journal = "Review of Scientific Instruments",
title = "A Contribution of Carrier Transport Processes to the Photoacoustic Effects in Doped Narrow Gap Semiconductors",
volume = "74",
number = "1",
pages = "595-597",
doi = "10.1063/1.1515891"
}
Radulović, K., Nikolić, P. M., Vasiljević-Radović, D., Todorović, D., Vujatović, S. S., Bojičić, A. I., Blagojević, V.,& Urošević, D.. (2003). A Contribution of Carrier Transport Processes to the Photoacoustic Effects in Doped Narrow Gap Semiconductors. in Review of Scientific Instruments
American Institute of Physics., 74(1), 595-597.
https://doi.org/10.1063/1.1515891
Radulović K, Nikolić PM, Vasiljević-Radović D, Todorović D, Vujatović SS, Bojičić AI, Blagojević V, Urošević D. A Contribution of Carrier Transport Processes to the Photoacoustic Effects in Doped Narrow Gap Semiconductors. in Review of Scientific Instruments. 2003;74(1):595-597.
doi:10.1063/1.1515891 .
Radulović, Katarina, Nikolić, Pantelija M., Vasiljević-Radović, Dana, Todorović, Dragan, Vujatović, Stevan S., Bojičić, A. I., Blagojević, Vladimir, Urošević, Dragan, "A Contribution of Carrier Transport Processes to the Photoacoustic Effects in Doped Narrow Gap Semiconductors" in Review of Scientific Instruments, 74, no. 1 (2003):595-597,
https://doi.org/10.1063/1.1515891 . .

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