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dc.creatorAndjelković, Marko S.
dc.creatorMarjanović, Miloš
dc.creatorChen, Junchao
dc.creatorIlić, Stefan
dc.creatorRistić, Goran
dc.creatorKrstić, Miloš
dc.date.accessioned2022-12-01T14:04:26Z
dc.date.available2022-12-01T14:04:26Z
dc.date.issued2022
dc.identifier.issn0026-2714
dc.identifier.urihttps://cer.ihtm.bg.ac.rs/handle/123456789/5422
dc.description.abstractThe bulk built-in current sensor (BBICS) is a cost-effective solution for detection of energetic particle strikes in integrated circuits. With an appropriate number of BBICSs distributed across the chip, the soft error locations can be identified, and the dynamic fault-tolerant mechanisms can be activated locally to correct the soft errors in the affected logic. In this work, we introduce a pulse stretching BBICS (PS-BBICS) constructed by connecting a standard BBICS and a custom-designed pulse stretching cell. The aim of PS-BBICS is to enable the on-chip measurement of the single event transient (SET) pulse width, allowing to detect the linear energy transfer (LET) of incident particles, and thus assess more accurately the radiation conditions. Based on Spectre simulations, we have shown that for the LET from 1 to 100 MeV cm2 mg−1, the SET pulse width detected by PS-BBICS varies by 620–800 ps. The threshold LET of PS-BBICS increases linearly with the number of monitored inverters, and it is around 1.7 MeV cm2 mg−1 for ten monitored inverters. On the other hand, the SET pulse width is independent of the number of monitored inverters for LET > 4 MeV cm2 mg−1. It was shown that supply voltage, temperature and process variations have strong impact on the response of PS-BBICS.sr
dc.language.isoensr
dc.publisherElseviersr
dc.relationinfo:eu-repo/grantAgreement/EC/H2020/857558/EU//sr
dc.rightsopenAccesssr
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/
dc.sourceMicroelectronics Reliabilitysr
dc.subjectBulk built-in current sensorsr
dc.subjectSingle event transientssr
dc.subjectSoft errorssr
dc.titlePS-BBICS: Pulse stretching bulk built-in current sensor for on-chip measurement of single event transientssr
dc.typearticlesr
dc.rights.licenseBY-NC-NDsr
dc.citation.volume138
dc.citation.spage114726
dc.citation.rankM23~
dc.identifier.doi10.1016/j.microrel.2022.114726
dc.identifier.fulltexthttp://cer.ihtm.bg.ac.rs/bitstream/id/22958/1-s2.0-S0026271422002505-main.pdf
dc.identifier.scopus2-s2.0-85140981999
dc.type.versionpublishedVersionsr


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Приказ основних података о документу