Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor
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This paper describes the possibility of using an Electrically Programmable Analog Device (EPAD) as a gamma radiation sensor. Zero-biased EPAD has the lowest fading and the highest sensitivity in the 300 Gy dose range. Dynamic bias of the control gate during irradiation was presented for the first time; this method achieved higher sensitivity compared to static-biased EPADs and better linear dependence. Due to the degradation of the transfer characteristics of EPAD during irradiation, a function of the safe operation area has been found that determines the maximum voltage at the control gate for the desired dose, which will not lead to degradation of the transistor. Using an energy band diagram, it was explained why the zero-biased EPAD has higher sensitivity than the static-biased EPAD.
Кључне речи:
floating-gate MOS transistor / ionizing radiation sensor / ztc / semiconductor dosimeter / transistor dynamic biasingИзвор:
Sensors, 2020, 20, 11, 3329-Издавач:
- MDPI
DOI: 10.3390/s20113329
ISSN: 1424-8220
WoS: 000552737900322
Scopus: 2-s2.0-85086523613
Институција/група
IHTMTY - JOUR AU - Ilić, Stefan AU - Jevtić, Aleksandar AU - Stanković, Srboljub AU - Ristić, Goran PY - 2020 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/4939 AB - This paper describes the possibility of using an Electrically Programmable Analog Device (EPAD) as a gamma radiation sensor. Zero-biased EPAD has the lowest fading and the highest sensitivity in the 300 Gy dose range. Dynamic bias of the control gate during irradiation was presented for the first time; this method achieved higher sensitivity compared to static-biased EPADs and better linear dependence. Due to the degradation of the transfer characteristics of EPAD during irradiation, a function of the safe operation area has been found that determines the maximum voltage at the control gate for the desired dose, which will not lead to degradation of the transistor. Using an energy band diagram, it was explained why the zero-biased EPAD has higher sensitivity than the static-biased EPAD. PB - MDPI T2 - Sensors T1 - Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor VL - 20 IS - 11 SP - 3329 DO - 10.3390/s20113329 ER -
@article{ author = "Ilić, Stefan and Jevtić, Aleksandar and Stanković, Srboljub and Ristić, Goran", year = "2020", abstract = "This paper describes the possibility of using an Electrically Programmable Analog Device (EPAD) as a gamma radiation sensor. Zero-biased EPAD has the lowest fading and the highest sensitivity in the 300 Gy dose range. Dynamic bias of the control gate during irradiation was presented for the first time; this method achieved higher sensitivity compared to static-biased EPADs and better linear dependence. Due to the degradation of the transfer characteristics of EPAD during irradiation, a function of the safe operation area has been found that determines the maximum voltage at the control gate for the desired dose, which will not lead to degradation of the transistor. Using an energy band diagram, it was explained why the zero-biased EPAD has higher sensitivity than the static-biased EPAD.", publisher = "MDPI", journal = "Sensors", title = "Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor", volume = "20", number = "11", pages = "3329", doi = "10.3390/s20113329" }
Ilić, S., Jevtić, A., Stanković, S.,& Ristić, G.. (2020). Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor. in Sensors MDPI., 20(11), 3329. https://doi.org/10.3390/s20113329
Ilić S, Jevtić A, Stanković S, Ristić G. Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor. in Sensors. 2020;20(11):3329. doi:10.3390/s20113329 .
Ilić, Stefan, Jevtić, Aleksandar, Stanković, Srboljub, Ristić, Goran, "Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor" in Sensors, 20, no. 11 (2020):3329, https://doi.org/10.3390/s20113329 . .