Recharging process of commercial floating-gate MOS transistor in dosimetry application

Ilić, Stefan D.; Andjelković, Marko S.; Duane, Russell; Palma, Alberto J.; Sarajlić, Milija; Stanković, Srboljub; Ristić, Goran

doi:10.1016/j.microrel.2021.114322

2021

1-s2.0-S0026271421002882-main.pdf (989.2Kb)

Аутори

Ilić, Stefan D.

Andjelković, Marko S.
Duane, Russell

Palma, Alberto J.

Sarajlić, Milija

Stanković, Srboljub
Ristić, Goran

Чланак у часопису (Објављена верзија)

Метаподаци

Приказ свих података о документу

Апстракт

We investigated the recharging process of commercial floating gate device (EPAD) during the six different dose rates and ten irradiation cycles with the highest dose rate. Dose rate dependence of the floating gate dosimeter was observed from 1 Gy/h to 26 Gy/h (H2O). There is no change of the dosimetric characteristic with a constant dose rate of 26 Gy/h for ten cycles. The absorbed dose does not affect the drift of the threshold voltage readings after the irradiation steps. The reprogramming characteristic is not degrading with the absorbed dose for the ten irradiation cycles, giving the promising potential in the application for dosimetric purposes.

Кључне речи:

Floating gate / Radiation sensor / EPAD / Recharging / Programming cell / Non-volatile memory

Извор:
Microelectronics Reliability, 2021, 126, 114322-

Издавач:

Elsevier

Финансирање / пројекти:

DOI: 10.1016/j.microrel.2021.114322

ISSN: 0026-2714

WoS: 000733412800004

Scopus: 2-s2.0-85120850474

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	1

TY  - JOUR
AU  - Ilić, Stefan D.
AU  - Andjelković, Marko S.
AU  - Duane, Russell
AU  - Palma, Alberto J.
AU  - Sarajlić, Milija
AU  - Stanković, Srboljub
AU  - Ristić, Goran
PY  - 2021
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/4911
AB  - We investigated the recharging process of commercial floating gate device (EPAD) during the six different dose rates and ten irradiation cycles with the highest dose rate. Dose rate dependence of the floating gate dosimeter was observed from 1 Gy/h to 26 Gy/h (H2O). There is no change of the dosimetric characteristic with a constant dose rate of 26 Gy/h for ten cycles. The absorbed dose does not affect the drift of the threshold voltage readings after the irradiation steps. The reprogramming characteristic is not degrading with the absorbed dose for the ten irradiation cycles, giving the promising potential in the application for dosimetric purposes.
PB  - Elsevier
T2  - Microelectronics Reliability
T1  - Recharging process of commercial floating-gate MOS transistor in dosimetry application
VL  - 126
SP  - 114322
DO  - 10.1016/j.microrel.2021.114322
ER  -

@article{
author = "Ilić, Stefan D. and Andjelković, Marko S. and Duane, Russell and Palma, Alberto J. and Sarajlić, Milija and Stanković, Srboljub and Ristić, Goran",
year = "2021",
abstract = "We investigated the recharging process of commercial floating gate device (EPAD) during the six different dose rates and ten irradiation cycles with the highest dose rate. Dose rate dependence of the floating gate dosimeter was observed from 1 Gy/h to 26 Gy/h (H2O). There is no change of the dosimetric characteristic with a constant dose rate of 26 Gy/h for ten cycles. The absorbed dose does not affect the drift of the threshold voltage readings after the irradiation steps. The reprogramming characteristic is not degrading with the absorbed dose for the ten irradiation cycles, giving the promising potential in the application for dosimetric purposes.",
publisher = "Elsevier",
journal = "Microelectronics Reliability",
title = "Recharging process of commercial floating-gate MOS transistor in dosimetry application",
volume = "126",
pages = "114322",
doi = "10.1016/j.microrel.2021.114322"
}

Ilić, S. D., Andjelković, M. S., Duane, R., Palma, A. J., Sarajlić, M., Stanković, S.,& Ristić, G.. (2021). Recharging process of commercial floating-gate MOS transistor in dosimetry application. in Microelectronics Reliability
Elsevier., 126, 114322.
https://doi.org/10.1016/j.microrel.2021.114322

Ilić SD, Andjelković MS, Duane R, Palma AJ, Sarajlić M, Stanković S, Ristić G. Recharging process of commercial floating-gate MOS transistor in dosimetry application. in Microelectronics Reliability. 2021;126:114322.
doi:10.1016/j.microrel.2021.114322 .

Ilić, Stefan D., Andjelković, Marko S., Duane, Russell, Palma, Alberto J., Sarajlić, Milija, Stanković, Srboljub, Ristić, Goran, "Recharging process of commercial floating-gate MOS transistor in dosimetry application" in Microelectronics Reliability, 126 (2021):114322,
https://doi.org/10.1016/j.microrel.2021.114322 . .