CER - Central Repository
Institute of Chemistry, Technology and Metallurgy
    • English
    • Српски
    • Српски (Serbia)
  • English 
    • English
    • Serbian (Cyrillic)
    • Serbian (Latin)
  • Login
View Item 
  •   CER
  • IHTM
  • Radovi istraživača / Researchers' publications
  • View Item
  •   CER
  • IHTM
  • Radovi istraživača / Researchers' publications
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

Power silicon carbide schottky diodes as current mode ?-radiation detectors

Authorized Users Only
2021
Authors
Ilić, Stefan D.
Anđelković, M. S.
Carvajal, M.A.
Lallena, A.M.
Krstić, M.
Stanković, S.
Ristić, G.S.
Conference object (Published version)
Metadata
Show full item record
Abstract
In this paper, the feasibility of using commercial power Silicon Carbide (SiC) Schottky diodes as a current mode ?-radiation detector have been examined. Diodes with almost identical electric characteristics are purchased from two different manufacturers, On Semiconductor and RoHM. They have been tested under gamma radiation exposure from a Co-60 source. The current response during irradiation has been measured for various dose rates with reversed diode bias. Investigated range of dose rates was from 0.258 Gy/h to 26.312 Gy/h, and reverse diode bias values were 10 V, 20 V, 50 V, 100 V and 200 V. Tested Schottky diodes produce stable current response for the investigated dose rates. Although the manufacturers are different, the results show that the dosimetric characteristics of these diodes have an excellent match. Sensitivity was proportional to the applied reverse bias voltage. A simple power-law can very well describe the dependence of measured radiation-induced current on dose rate....

Keywords:
Power silicon carbide schottky diodes / schottky diodes / radiation detectors
Source:
Proceedings of the International Conference on Microelectronics, ICM, 32nd IEEE International Conference on Microelectronics, MIEL 2021, 2021, 337-340
Publisher:
  • Belgrade : Institute of Electrical and Electronics Engineers Inc
Funding / projects:
  • Ministry of Education, Science and Technological Development, Republic of Serbia, Grant no. 200026 (University of Belgrade, Institute of Chemistry, Technology and Metallurgy - IChTM) (RS-200026)
  • Joint research of measurements and effects of ionizing and UV radiation in medicine and environmental protection (RS-43011)
  • ELICSIR - Enhancement of Sceintific Excellence and Innovation Potential in Electronic Instrumentation for Ionising Radiation Environments (EU-857558)

DOI: 10.1109/MIEL52794.2021.9569076

ISSN: 978-166544528-3

Scopus: 2-s2.0-85118457713
[ Google Scholar ]
URI
https://cer.ihtm.bg.ac.rs/handle/123456789/4849
Collections
  • Radovi istraživača / Researchers' publications
Institution/Community
IHTM
TY  - CONF
AU  - Ilić, Stefan D.
AU  - Anđelković, M. S.
AU  - Carvajal, M.A.
AU  - Lallena, A.M.
AU  - Krstić, M.
AU  - Stanković, S.
AU  - Ristić, G.S.
PY  - 2021
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/4849
AB  - In this paper, the feasibility of using commercial power Silicon Carbide (SiC) Schottky diodes as a current mode ?-radiation detector have been examined. Diodes with almost identical electric characteristics are purchased from two different manufacturers, On Semiconductor and RoHM. They have been tested under gamma radiation exposure from a Co-60 source. The current response during irradiation has been measured for various dose rates with reversed diode bias. Investigated range of dose rates was from 0.258 Gy/h to 26.312 Gy/h, and reverse diode bias values were 10 V, 20 V, 50 V, 100 V and 200 V. Tested Schottky diodes produce stable current response for the investigated dose rates. Although the manufacturers are different, the results show that the dosimetric characteristics of these diodes have an excellent match. Sensitivity was proportional to the applied reverse bias voltage. A simple power-law can very well describe the dependence of measured radiation-induced current on dose rate.
PB  - Belgrade : Institute of Electrical and Electronics Engineers Inc
C3  - Proceedings of the International Conference on Microelectronics, ICM, 32nd IEEE International Conference on Microelectronics, MIEL 2021
T1  - Power silicon carbide schottky diodes as current mode ?-radiation detectors
SP  - 337
EP  - 340
DO  - 10.1109/MIEL52794.2021.9569076
ER  - 
@conference{
author = "Ilić, Stefan D. and Anđelković, M. S. and Carvajal, M.A. and Lallena, A.M. and Krstić, M. and Stanković, S. and Ristić, G.S.",
year = "2021",
abstract = "In this paper, the feasibility of using commercial power Silicon Carbide (SiC) Schottky diodes as a current mode ?-radiation detector have been examined. Diodes with almost identical electric characteristics are purchased from two different manufacturers, On Semiconductor and RoHM. They have been tested under gamma radiation exposure from a Co-60 source. The current response during irradiation has been measured for various dose rates with reversed diode bias. Investigated range of dose rates was from 0.258 Gy/h to 26.312 Gy/h, and reverse diode bias values were 10 V, 20 V, 50 V, 100 V and 200 V. Tested Schottky diodes produce stable current response for the investigated dose rates. Although the manufacturers are different, the results show that the dosimetric characteristics of these diodes have an excellent match. Sensitivity was proportional to the applied reverse bias voltage. A simple power-law can very well describe the dependence of measured radiation-induced current on dose rate.",
publisher = "Belgrade : Institute of Electrical and Electronics Engineers Inc",
journal = "Proceedings of the International Conference on Microelectronics, ICM, 32nd IEEE International Conference on Microelectronics, MIEL 2021",
title = "Power silicon carbide schottky diodes as current mode ?-radiation detectors",
pages = "337-340",
doi = "10.1109/MIEL52794.2021.9569076"
}
Ilić, S. D., Anđelković, M. S., Carvajal, M.A., Lallena, A.M., Krstić, M., Stanković, S.,& Ristić, G.S.. (2021). Power silicon carbide schottky diodes as current mode ?-radiation detectors. in Proceedings of the International Conference on Microelectronics, ICM, 32nd IEEE International Conference on Microelectronics, MIEL 2021
Belgrade : Institute of Electrical and Electronics Engineers Inc., 337-340.
https://doi.org/10.1109/MIEL52794.2021.9569076
Ilić SD, Anđelković MS, Carvajal M, Lallena A, Krstić M, Stanković S, Ristić G. Power silicon carbide schottky diodes as current mode ?-radiation detectors. in Proceedings of the International Conference on Microelectronics, ICM, 32nd IEEE International Conference on Microelectronics, MIEL 2021. 2021;:337-340.
doi:10.1109/MIEL52794.2021.9569076 .
Ilić, Stefan D., Anđelković, M. S., Carvajal, M.A., Lallena, A.M., Krstić, M., Stanković, S., Ristić, G.S., "Power silicon carbide schottky diodes as current mode ?-radiation detectors" in Proceedings of the International Conference on Microelectronics, ICM, 32nd IEEE International Conference on Microelectronics, MIEL 2021 (2021):337-340,
https://doi.org/10.1109/MIEL52794.2021.9569076 . .

DSpace software copyright © 2002-2015  DuraSpace
About CeR – Central Repository | Send Feedback

re3dataOpenAIRERCUB
 

 

All of DSpaceInstitutions/communitiesAuthorsTitlesSubjectsThis institutionAuthorsTitlesSubjects

Statistics

View Usage Statistics

DSpace software copyright © 2002-2015  DuraSpace
About CeR – Central Repository | Send Feedback

re3dataOpenAIRERCUB