In this paper, the feasibility of using commercial power Silicon Carbide (SiC) Schottky diodes as a current mode ?-radiation detector have been examined. Diodes with almost identical electric characteristics are purchased from two different manufacturers, On Semiconductor and RoHM. They have been tested under gamma radiation exposure from a Co-60 source. The current response during irradiation has been measured for various dose rates with reversed diode bias. Investigated range of dose rates was from 0.258 Gy/h to 26.312 Gy/h, and reverse diode bias values were 10 V, 20 V, 50 V, 100 V and 200 V. Tested Schottky diodes produce stable current response for the investigated dose rates. Although the manufacturers are different, the results show that the dosimetric characteristics of these diodes have an excellent match. Sensitivity was proportional to the applied reverse bias voltage. A simple power-law can very well describe the dependence of measured radiation-induced current on dose rate....
TY - CONF
AU - Ilić, Stefan D.
AU - Anđelković, M. S.
AU - Carvajal, M.A.
AU - Lallena, A.M.
AU - Krstić, M.
AU - Stanković, S.
AU - Ristić, G.S.
PY - 2021
UR - https://cer.ihtm.bg.ac.rs/handle/123456789/4849
AB - In this paper, the feasibility of using commercial power Silicon Carbide (SiC) Schottky diodes as a current mode ?-radiation detector have been examined. Diodes with almost identical electric characteristics are purchased from two different manufacturers, On Semiconductor and RoHM. They have been tested under gamma radiation exposure from a Co-60 source. The current response during irradiation has been measured for various dose rates with reversed diode bias. Investigated range of dose rates was from 0.258 Gy/h to 26.312 Gy/h, and reverse diode bias values were 10 V, 20 V, 50 V, 100 V and 200 V. Tested Schottky diodes produce stable current response for the investigated dose rates. Although the manufacturers are different, the results show that the dosimetric characteristics of these diodes have an excellent match. Sensitivity was proportional to the applied reverse bias voltage. A simple power-law can very well describe the dependence of measured radiation-induced current on dose rate.
PB - Belgrade : Institute of Electrical and Electronics Engineers Inc
C3 - Proceedings of the International Conference on Microelectronics, ICM, 32nd IEEE International Conference on Microelectronics, MIEL 2021
T1 - Power silicon carbide schottky diodes as current mode ?-radiation detectors
SP - 337
EP - 340
DO - 10.1109/MIEL52794.2021.9569076
ER -
@conference{
author = "Ilić, Stefan D. and Anđelković, M. S. and Carvajal, M.A. and Lallena, A.M. and Krstić, M. and Stanković, S. and Ristić, G.S.",
year = "2021",
abstract = "In this paper, the feasibility of using commercial power Silicon Carbide (SiC) Schottky diodes as a current mode ?-radiation detector have been examined. Diodes with almost identical electric characteristics are purchased from two different manufacturers, On Semiconductor and RoHM. They have been tested under gamma radiation exposure from a Co-60 source. The current response during irradiation has been measured for various dose rates with reversed diode bias. Investigated range of dose rates was from 0.258 Gy/h to 26.312 Gy/h, and reverse diode bias values were 10 V, 20 V, 50 V, 100 V and 200 V. Tested Schottky diodes produce stable current response for the investigated dose rates. Although the manufacturers are different, the results show that the dosimetric characteristics of these diodes have an excellent match. Sensitivity was proportional to the applied reverse bias voltage. A simple power-law can very well describe the dependence of measured radiation-induced current on dose rate.",
publisher = "Belgrade : Institute of Electrical and Electronics Engineers Inc",
journal = "Proceedings of the International Conference on Microelectronics, ICM, 32nd IEEE International Conference on Microelectronics, MIEL 2021",
title = "Power silicon carbide schottky diodes as current mode ?-radiation detectors",
pages = "337-340",
doi = "10.1109/MIEL52794.2021.9569076"
}
Ilić, S. D., Anđelković, M. S., Carvajal, M.A., Lallena, A.M., Krstić, M., Stanković, S.,& Ristić, G.S.. (2021). Power silicon carbide schottky diodes as current mode ?-radiation detectors. in Proceedings of the International Conference on Microelectronics, ICM, 32nd IEEE International Conference on Microelectronics, MIEL 2021
Belgrade : Institute of Electrical and Electronics Engineers Inc., 337-340.
https://doi.org/10.1109/MIEL52794.2021.9569076
Ilić SD, Anđelković MS, Carvajal M, Lallena A, Krstić M, Stanković S, Ristić G. Power silicon carbide schottky diodes as current mode ?-radiation detectors. in Proceedings of the International Conference on Microelectronics, ICM, 32nd IEEE International Conference on Microelectronics, MIEL 2021. 2021;:337-340.
doi:10.1109/MIEL52794.2021.9569076 .
Ilić, Stefan D., Anđelković, M. S., Carvajal, M.A., Lallena, A.M., Krstić, M., Stanković, S., Ristić, G.S., "Power silicon carbide schottky diodes as current mode ?-radiation detectors" in Proceedings of the International Conference on Microelectronics, ICM, 32nd IEEE International Conference on Microelectronics, MIEL 2021 (2021):337-340,
https://doi.org/10.1109/MIEL52794.2021.9569076 . .
