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Investigation of interface and surface energy states in semiconductors by PA method
dc.creator | Todorović, D. M. | |
dc.creator | Smiljanić, Miloljub | |
dc.creator | Jović, Vesna | |
dc.creator | Sarajlić, Milija | |
dc.creator | Grozdić, T. | |
dc.date.accessioned | 2019-01-30T17:19:07Z | |
dc.date.available | 2019-01-30T17:19:07Z | |
dc.date.issued | 2008 | |
dc.identifier.issn | 1951-6355 | |
dc.identifier.uri | https://cer.ihtm.bg.ac.rs/handle/123456789/481 | |
dc.description.abstract | The photoacoustic (PA) signal should generally change with the extent of damage, in the form of surface energy states (SES) or interface energy states (IES). For a mechanically, chemically or particles processed (Ar-plasma etching, ion implantation, etc) semiconductor surface, the measured PA signal can be expect to increase as a consequence of the surface (interface) optical, thermal and carrier transport properties changes. The SES on Si wafer and IES in SiO2 film/Si substrate are investigated by PA spectroscopy. The sub-bandgap PA spectra are used to obtain the energy-dependent distribution of SES or IES. | en |
dc.relation | TR6151 - Micro and Nanosystem Technologies, Structures and Sensors | |
dc.rights | restrictedAccess | |
dc.source | European Physical Journal: Special Topics | |
dc.title | Investigation of interface and surface energy states in semiconductors by PA method | en |
dc.type | conferenceObject | |
dc.rights.license | ARR | |
dc.citation.volume | 153 | |
dc.citation.issue | 1 | |
dc.citation.spage | 247 | |
dc.citation.epage | 250 | |
dc.citation.other | 153(1): 247-250 | |
dc.citation.rank | M23 | |
dc.identifier.doi | 10.1140/epjst/e2008-00437-1 | |
dc.identifier.scopus | 2-s2.0-40949096551 | |
dc.identifier.wos | 000254041300056 | |
dc.type.version | publishedVersion |