Investigation of interface and surface energy states in semiconductors by PA method
Abstract
The photoacoustic (PA) signal should generally change with the extent of damage, in the form of surface energy states (SES) or interface energy states (IES). For a mechanically, chemically or particles processed (Ar-plasma etching, ion implantation, etc) semiconductor surface, the measured PA signal can be expect to increase as a consequence of the surface (interface) optical, thermal and carrier transport properties changes. The SES on Si wafer and IES in SiO2 film/Si substrate are investigated by PA spectroscopy. The sub-bandgap PA spectra are used to obtain the energy-dependent distribution of SES or IES.
Source:
European Physical Journal: Special Topics, 2008, 153, 1, 247-250Funding / projects:
- TR6151 - Micro and Nanosystem Technologies, Structures and Sensors
DOI: 10.1140/epjst/e2008-00437-1
ISSN: 1951-6355
WoS: 000254041300056
Scopus: 2-s2.0-40949096551
Collections
Institution/Community
IHTMTY - CONF AU - Todorović, D. M. AU - Smiljanić, Miloljub AU - Jović, Vesna AU - Sarajlić, Milija AU - Grozdić, T. PY - 2008 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/481 AB - The photoacoustic (PA) signal should generally change with the extent of damage, in the form of surface energy states (SES) or interface energy states (IES). For a mechanically, chemically or particles processed (Ar-plasma etching, ion implantation, etc) semiconductor surface, the measured PA signal can be expect to increase as a consequence of the surface (interface) optical, thermal and carrier transport properties changes. The SES on Si wafer and IES in SiO2 film/Si substrate are investigated by PA spectroscopy. The sub-bandgap PA spectra are used to obtain the energy-dependent distribution of SES or IES. C3 - European Physical Journal: Special Topics T1 - Investigation of interface and surface energy states in semiconductors by PA method VL - 153 IS - 1 SP - 247 EP - 250 DO - 10.1140/epjst/e2008-00437-1 ER -
@conference{ author = "Todorović, D. M. and Smiljanić, Miloljub and Jović, Vesna and Sarajlić, Milija and Grozdić, T.", year = "2008", abstract = "The photoacoustic (PA) signal should generally change with the extent of damage, in the form of surface energy states (SES) or interface energy states (IES). For a mechanically, chemically or particles processed (Ar-plasma etching, ion implantation, etc) semiconductor surface, the measured PA signal can be expect to increase as a consequence of the surface (interface) optical, thermal and carrier transport properties changes. The SES on Si wafer and IES in SiO2 film/Si substrate are investigated by PA spectroscopy. The sub-bandgap PA spectra are used to obtain the energy-dependent distribution of SES or IES.", journal = "European Physical Journal: Special Topics", title = "Investigation of interface and surface energy states in semiconductors by PA method", volume = "153", number = "1", pages = "247-250", doi = "10.1140/epjst/e2008-00437-1" }
Todorović, D. M., Smiljanić, M., Jović, V., Sarajlić, M.,& Grozdić, T.. (2008). Investigation of interface and surface energy states in semiconductors by PA method. in European Physical Journal: Special Topics, 153(1), 247-250. https://doi.org/10.1140/epjst/e2008-00437-1
Todorović DM, Smiljanić M, Jović V, Sarajlić M, Grozdić T. Investigation of interface and surface energy states in semiconductors by PA method. in European Physical Journal: Special Topics. 2008;153(1):247-250. doi:10.1140/epjst/e2008-00437-1 .
Todorović, D. M., Smiljanić, Miloljub, Jović, Vesna, Sarajlić, Milija, Grozdić, T., "Investigation of interface and surface energy states in semiconductors by PA method" in European Physical Journal: Special Topics, 153, no. 1 (2008):247-250, https://doi.org/10.1140/epjst/e2008-00437-1 . .