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Investigation of interface and surface energy states in semiconductors by PA method

Authorized Users Only
2008
Authors
Todorović, D. M.
Smiljanić, Miloljub
Jović, Vesna
Sarajlić, Milija
Grozdić, T.
Conference object (Published version)
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Abstract
The photoacoustic (PA) signal should generally change with the extent of damage, in the form of surface energy states (SES) or interface energy states (IES). For a mechanically, chemically or particles processed (Ar-plasma etching, ion implantation, etc) semiconductor surface, the measured PA signal can be expect to increase as a consequence of the surface (interface) optical, thermal and carrier transport properties changes. The SES on Si wafer and IES in SiO2 film/Si substrate are investigated by PA spectroscopy. The sub-bandgap PA spectra are used to obtain the energy-dependent distribution of SES or IES.
Source:
European Physical Journal: Special Topics, 2008, 153, 1, 247-250
Funding / projects:
  • TR6151 - Micro and Nanosystem Technologies, Structures and Sensors

DOI: 10.1140/epjst/e2008-00437-1

ISSN: 1951-6355

WoS: 000254041300056

Scopus: 2-s2.0-40949096551
[ Google Scholar ]
URI
https://cer.ihtm.bg.ac.rs/handle/123456789/481
Collections
  • Radovi istraživača / Researchers' publications
Institution/Community
IHTM
TY  - CONF
AU  - Todorović, D. M.
AU  - Smiljanić, Miloljub
AU  - Jović, Vesna
AU  - Sarajlić, Milija
AU  - Grozdić, T.
PY  - 2008
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/481
AB  - The photoacoustic (PA) signal should generally change with the extent of damage, in the form of surface energy states (SES) or interface energy states (IES). For a mechanically, chemically or particles processed (Ar-plasma etching, ion implantation, etc) semiconductor surface, the measured PA signal can be expect to increase as a consequence of the surface (interface) optical, thermal and carrier transport properties changes. The SES on Si wafer and IES in SiO2 film/Si substrate are investigated by PA spectroscopy. The sub-bandgap PA spectra are used to obtain the energy-dependent distribution of SES or IES.
C3  - European Physical Journal: Special Topics
T1  - Investigation of interface and surface energy states in semiconductors by PA method
VL  - 153
IS  - 1
SP  - 247
EP  - 250
DO  - 10.1140/epjst/e2008-00437-1
ER  - 
@conference{
author = "Todorović, D. M. and Smiljanić, Miloljub and Jović, Vesna and Sarajlić, Milija and Grozdić, T.",
year = "2008",
abstract = "The photoacoustic (PA) signal should generally change with the extent of damage, in the form of surface energy states (SES) or interface energy states (IES). For a mechanically, chemically or particles processed (Ar-plasma etching, ion implantation, etc) semiconductor surface, the measured PA signal can be expect to increase as a consequence of the surface (interface) optical, thermal and carrier transport properties changes. The SES on Si wafer and IES in SiO2 film/Si substrate are investigated by PA spectroscopy. The sub-bandgap PA spectra are used to obtain the energy-dependent distribution of SES or IES.",
journal = "European Physical Journal: Special Topics",
title = "Investigation of interface and surface energy states in semiconductors by PA method",
volume = "153",
number = "1",
pages = "247-250",
doi = "10.1140/epjst/e2008-00437-1"
}
Todorović, D. M., Smiljanić, M., Jović, V., Sarajlić, M.,& Grozdić, T.. (2008). Investigation of interface and surface energy states in semiconductors by PA method. in European Physical Journal: Special Topics, 153(1), 247-250.
https://doi.org/10.1140/epjst/e2008-00437-1
Todorović DM, Smiljanić M, Jović V, Sarajlić M, Grozdić T. Investigation of interface and surface energy states in semiconductors by PA method. in European Physical Journal: Special Topics. 2008;153(1):247-250.
doi:10.1140/epjst/e2008-00437-1 .
Todorović, D. M., Smiljanić, Miloljub, Jović, Vesna, Sarajlić, Milija, Grozdić, T., "Investigation of interface and surface energy states in semiconductors by PA method" in European Physical Journal: Special Topics, 153, no. 1 (2008):247-250,
https://doi.org/10.1140/epjst/e2008-00437-1 . .

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