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dc.creatorJevtić, Milan M.
dc.creatorSmiljanić, Miloljub
dc.date.accessioned2019-01-30T17:19:04Z
dc.date.available2019-01-30T17:19:04Z
dc.date.issued2008
dc.identifier.issn0924-4247
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/477
dc.description.abstractLow frequency noise measurements can be used as a tool in diagnostics of silicon diaphragm-based piezoresistive pressure sensors after the sensor encapsulation and oil filling process are finished. We measured noise in piezoresistors comprising the Wheatstone bridge of the sensor. Our results show that oil filling process causes a noise decrease, particularly in the low frequency range. This is correlated with the oxide quality and the concentration of surrounding ions above the free oxide surface, as well with the fluctuation of adsorption-desorption (AD) processes of charged particles at the free oxide surface and trapping/detrapping processes at the oxide/silicon interface. A model for the piezoresistor noise due to fluctuations caused by the AD processes and a criterion for screening the sensors based on noise measurements are proposed.en
dc.relationSerbian Ministry of Science (TR-6116B)
dc.relationSerbian Ministry of Science (TR-6101B)
dc.rightsrestrictedAccess
dc.sourceSensors and Actuators, A: Physical
dc.subjectNoiseen
dc.subjectNoise diagnosticen
dc.subjectPiezoresistorsen
dc.subjectPressure sensorsen
dc.subjectSilicon sensorsen
dc.titleDiagnostic of silicon piezoresistive pressure sensors by low frequency noise measurementsen
dc.typearticle
dc.rights.licenseARR
dcterms.abstractСмиљанић, Милољуб; Јевтић, М.М.;
dc.citation.volume144
dc.citation.issue2
dc.citation.spage267
dc.citation.epage274
dc.citation.other144(2): 267-274
dc.citation.rankM21
dc.identifier.doi10.1016/j.sna.2008.02.002
dc.identifier.rcubConv_4156
dc.identifier.scopus2-s2.0-43849104628
dc.identifier.wos000256896700005
dc.type.versionpublishedVersion


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