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dc.creatorRakočević, Zlatko Lj.
dc.creatorŠtrbac, Svetlana
dc.creatorBehm, R.-J.
dc.date.accessioned2019-01-30T17:18:31Z
dc.date.available2019-01-30T17:18:31Z
dc.date.issued2008
dc.identifier.issn0040-6090
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/450
dc.description.abstractNickel was deposited on Ru(0001) in a vacuum chamber at a temperature of 295 K. The depositions were performed using both a continuous and an interrupted flux of Ni, up to the same coverage of 0.25 monolayer. The growth of Ni on Ru(0001) was studied by ultra-high vacuum scanning tunneling microscopy. It is shown that changing the deposition or the pause duration leads to a change of the dominant growth carriers in the postnucleation period, affecting thus the morphology of the obtained Ni/Ru(0001) surfaces. For a pause duration of 10 s, the saturation cluster density obtained by interrupted-flux deposition was two times higher than one obtained with continuous deposition, and increases with the number of periods. With further increase of the pause duration, the saturation cluster density decreased due to the formation of larger clusters, and might even fall below the value obtained for continuous deposition.en
dc.relationinfo:eu-repo/grantAgreement/MESTD/MPN2006-2010/141001/RS//
dc.rightsrestrictedAccess
dc.sourceThin Solid Films
dc.subjectInterrupted fluxen
dc.subjectNickelen
dc.subjectRu(0001)en
dc.subjectUHV-STMen
dc.subjectVacuum depositionen
dc.titleInterrupted-flux deposition: Ni on Ru(0001)en
dc.typearticle
dc.rights.licenseARR
dcterms.abstractШтрбац, Светлана; Бехм, Р.-Ј.; Ракочевић, Златко Љ.;
dc.citation.volume517
dc.citation.issue2
dc.citation.spage709
dc.citation.epage713
dc.citation.other517(2): 709-713
dc.citation.rankM21
dc.identifier.doi10.1016/j.tsf.2008.08.116
dc.identifier.rcubConv_4171
dc.identifier.scopus2-s2.0-55149091560
dc.identifier.wos000261693900046
dc.type.versionpublishedVersion


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