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Isothermal vapour-phase epitaxy of mercury-cadmium telluride (Hg,Cd)Te

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1995
Authors
Đurić, Zoran G.
Article (Published version)
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Abstract
Isothermal vapour-phase epitaxy (ISOVPE) was the earliest process to be developed for the fabrication of epitaxial mercury-cadmium telluride layers. Although the process was somewhat neglected in the previous period, mostly because of the appearance of metalorganic chemical vapour phase epitaxy and molecular-beam epitaxy, the results of the most recent investigations show that the application of this method can be expected in the second generation of photovoltaic (PV) or metal-insulator-semiconductor (MIS) detectors in the focal plane. This review paper presents the development of ISOVPE giving a complete theoretical model of the process, which is based on fundamental results in the field of phase diagrams of the (Hg,Cd)Te the interdiffusion of Hg and Cd, gas-phase transport, etc. Using the results of this theoretical model, a production system for ISOVPE was designed, in which the deposition process, the high-temperature annealing for composition homogenization and the low-temperature... annealing for the achievement of the desired epitaxial-layer doping are all performed in the same cycle. Finally, the basic electrical and optical characteristics of ISOVPE layers are analysed. It is shown that in applications of the fabrication of PV and MIS detector arrays a full affirmation of this technology can be expected.

Keywords:
Annealing / Detectors / Diffusion / Electric properties / Epitaxial growth / High temperature operations / Low temperature operations / Mathematical models / Metallorganic vapor phase epitaxy / Molecular beam epitaxy / Optical properties / Phase diagrams / Composition homogenization / Interdiffusion / Isothermal vapor phase epitaxy / Mercury-cadmium telluride / Semiconducting tellurium compounds
Source:
Journal of Materials Science: Materials in Electronics, 1995, 6, 4, 187-218
Publisher:
  • Switzerland : Springer Nature

DOI: 10.1007/BF00187200

ISSN: 0957-4522; 1573-482X

Scopus: 2-s2.0-0029356728
[ Google Scholar ]
9
URI
https://cer.ihtm.bg.ac.rs/handle/123456789/4497
Collections
  • Radovi istraživača / Researchers' publications
Institution/Community
IHTM
TY  - JOUR
AU  - Đurić, Zoran G.
PY  - 1995
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/4497
AB  - Isothermal vapour-phase epitaxy (ISOVPE) was the earliest process to be developed for the fabrication of epitaxial mercury-cadmium telluride layers. Although the process was somewhat neglected in the previous period, mostly because of the appearance of metalorganic chemical vapour phase epitaxy and molecular-beam epitaxy, the results of the most recent investigations show that the application of this method can be expected in the second generation of photovoltaic (PV) or metal-insulator-semiconductor (MIS) detectors in the focal plane. This review paper presents the development of ISOVPE giving a complete theoretical model of the process, which is based on fundamental results in the field of phase diagrams of the (Hg,Cd)Te the interdiffusion of Hg and Cd, gas-phase transport, etc. Using the results of this theoretical model, a production system for ISOVPE was designed, in which the deposition process, the high-temperature annealing for composition homogenization and the low-temperature annealing for the achievement of the desired epitaxial-layer doping are all performed in the same cycle. Finally, the basic electrical and optical characteristics of ISOVPE layers are analysed. It is shown that in applications of the fabrication of PV and MIS detector arrays a full affirmation of this technology can be expected.
PB  - Switzerland : Springer Nature
T2  - Journal of Materials Science: Materials in Electronics
T1  - Isothermal vapour-phase epitaxy of mercury-cadmium telluride (Hg,Cd)Te
VL  - 6
IS  - 4
SP  - 187
EP  - 218
DO  - 10.1007/BF00187200
ER  - 
@article{
author = "Đurić, Zoran G.",
year = "1995",
abstract = "Isothermal vapour-phase epitaxy (ISOVPE) was the earliest process to be developed for the fabrication of epitaxial mercury-cadmium telluride layers. Although the process was somewhat neglected in the previous period, mostly because of the appearance of metalorganic chemical vapour phase epitaxy and molecular-beam epitaxy, the results of the most recent investigations show that the application of this method can be expected in the second generation of photovoltaic (PV) or metal-insulator-semiconductor (MIS) detectors in the focal plane. This review paper presents the development of ISOVPE giving a complete theoretical model of the process, which is based on fundamental results in the field of phase diagrams of the (Hg,Cd)Te the interdiffusion of Hg and Cd, gas-phase transport, etc. Using the results of this theoretical model, a production system for ISOVPE was designed, in which the deposition process, the high-temperature annealing for composition homogenization and the low-temperature annealing for the achievement of the desired epitaxial-layer doping are all performed in the same cycle. Finally, the basic electrical and optical characteristics of ISOVPE layers are analysed. It is shown that in applications of the fabrication of PV and MIS detector arrays a full affirmation of this technology can be expected.",
publisher = "Switzerland : Springer Nature",
journal = "Journal of Materials Science: Materials in Electronics",
title = "Isothermal vapour-phase epitaxy of mercury-cadmium telluride (Hg,Cd)Te",
volume = "6",
number = "4",
pages = "187-218",
doi = "10.1007/BF00187200"
}
Đurić, Z. G.. (1995). Isothermal vapour-phase epitaxy of mercury-cadmium telluride (Hg,Cd)Te. in Journal of Materials Science: Materials in Electronics
Switzerland : Springer Nature., 6(4), 187-218.
https://doi.org/10.1007/BF00187200
Đurić ZG. Isothermal vapour-phase epitaxy of mercury-cadmium telluride (Hg,Cd)Te. in Journal of Materials Science: Materials in Electronics. 1995;6(4):187-218.
doi:10.1007/BF00187200 .
Đurić, Zoran G., "Isothermal vapour-phase epitaxy of mercury-cadmium telluride (Hg,Cd)Te" in Journal of Materials Science: Materials in Electronics, 6, no. 4 (1995):187-218,
https://doi.org/10.1007/BF00187200 . .

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