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dc.creatorĐinović, Zoran V.
dc.creatorĐurić, Zoran G.
dc.creatorJakšić, Zoran
dc.creatorKermendi, Ferenc
dc.creatorRoknić, R.
dc.date.accessioned2021-04-23T13:25:35Z
dc.date.available2021-04-23T13:25:35Z
dc.date.issued1991
dc.identifier.issn0022-0248
dc.identifier.urihttps://cer.ihtm.bg.ac.rs/handle/123456789/4496
dc.description.abstractThe method of isothermal vapor phase epitaxy (ISOVPE) of Hg1-xCdxTe layers with fixed surface composition is presented. The epitaxial growth was performed from a Te-rich Hg1-yTey (y > 0.5) liquid source, in an open tube, two-temperatures setup. The Hg partial pressure limits the surface composition of the layers. It is shown that the growth takes place under near-equilibrium conditions, except in the very beginning. Therefore, the time change of the surface composition and the composition gradient ∂x/∂z is very low, especially near the surface. The dependence of the surface composition and the thickness of the layers on the main process parameters is considered, utilizing the general ISOVPE model. Very good agreement between the experimental and calculated values has been found. A comparison of composition profiles obtained by the epitaxial growth from solid and liquid sources is given.sr
dc.language.isoensr
dc.publisherElseviersr
dc.rightsrestrictedAccesssr
dc.sourceJournal of Crystal Growthsr
dc.subjectCrystals - Epitaxial Growthsr
dc.subjectTelluriumsr
dc.subjectTemperature Distributionsr
dc.subjectVapor Phase Epitaxysr
dc.subjectSemiconducting Cadmium Compoundssr
dc.titleIsothermal vapor phase epitaxy of (Hg,Cd) Te from Te-rich Hg1-yTey source(Article)sr
dc.typearticlesr
dc.rights.licenseARRsr
dcterms.abstractЂиновић, Зоран В.; Ђурић, Зоран Г.; Јакшић, Зоран; Керменди, Ференц; Рокнић, Р.;
dc.citation.volume108
dc.citation.issue3-4
dc.citation.spage710
dc.citation.epage718
dc.identifier.doi10.1016/0022-0248(91)90251-Y
dc.identifier.scopus2-s2.0-0026105276
dc.type.versionpublishedVersionsr


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