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dc.creatorĐurić, Zoran G.
dc.creatorPiotrowsky, Jozef
dc.date.accessioned2021-04-23T07:32:37Z
dc.date.available2021-04-23T07:32:37Z
dc.date.issued1987
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.urihttps://cer.ihtm.bg.ac.rs/handle/123456789/4493
dc.description.abstractA generalized model of the isothermal vapor phase epitaxy of (Hg,Cd)Te is presented, which for the first time enables us to predict the compositional profiles of the layers in dependence on growth parameters (temperature and time of deposition, mercury and inert gas partial pressures in the growth chamber, source to substrate spacing). The model can be applied to both closed and opened tube isothermal vapor phase epitaxy of (Hg,Cd)Te, and it explains quantitatively all the peculiarities of the epitaxial growth using this method. The model is confronted with experimental data, which correspond satisfactorily to the calculations without any fitting parameterssr
dc.language.isoensr
dc.publisherAmerican Instituts of Physicssr
dc.rightsrestrictedAccesssr
dc.sourceApplied Physics Letterssr
dc.subjectepitaxysr
dc.subjectmodelsr
dc.subjectcompositional profilessr
dc.subject(Hg,Cd)Tesr
dc.titleGeneralized model of the isothermal vapor phase epitaxy of (Hg,Cd)Tesr
dc.typearticlesr
dc.rights.licenseARRsr
dcterms.abstractПиотроwскy, Јозеф; Ђурић, Зоран Г.;
dc.citation.volume51
dc.citation.issue21
dc.citation.spage1699
dc.citation.epage1701
dc.identifier.doi10.1063/1.98548
dc.identifier.scopus2-s2.0-36549096217
dc.type.versionpublishedVersionsr


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