A generalized model of the isothermal vapor phase epitaxy of (Hg,Cd)Te is presented, which for the first time enables us to predict the compositional profiles of the layers in dependence on growth parameters (temperature and time of deposition, mercury and inert gas partial pressures in the growth chamber, source to substrate spacing). The model can be applied to both closed and opened tube isothermal vapor phase epitaxy of (Hg,Cd)Te, and it explains quantitatively all the peculiarities of the epitaxial growth using this method. The model is confronted with experimental data, which correspond satisfactorily to the calculations without any fitting parameters
Keywords:
epitaxy / model / compositional profiles / (Hg,Cd)Te
TY - JOUR
AU - Đurić, Zoran G.
AU - Piotrowsky, Jozef
PY - 1987
UR - https://cer.ihtm.bg.ac.rs/handle/123456789/4493
AB - A generalized model of the isothermal vapor phase epitaxy of (Hg,Cd)Te is presented, which for the first time enables us to predict the compositional profiles of the layers in dependence on growth parameters (temperature and time of deposition, mercury and inert gas partial pressures in the growth chamber, source to substrate spacing). The model can be applied to both closed and opened tube isothermal vapor phase epitaxy of (Hg,Cd)Te, and it explains quantitatively all the peculiarities of the epitaxial growth using this method. The model is confronted with experimental data, which correspond satisfactorily to the calculations without any fitting parameters
PB - American Instituts of Physics
T2 - Applied Physics Letters
T1 - Generalized model of the isothermal vapor phase epitaxy of (Hg,Cd)Te
VL - 51
IS - 21
SP - 1699
EP - 1701
DO - 10.1063/1.98548
ER -
@article{
author = "Đurić, Zoran G. and Piotrowsky, Jozef",
year = "1987",
abstract = "A generalized model of the isothermal vapor phase epitaxy of (Hg,Cd)Te is presented, which for the first time enables us to predict the compositional profiles of the layers in dependence on growth parameters (temperature and time of deposition, mercury and inert gas partial pressures in the growth chamber, source to substrate spacing). The model can be applied to both closed and opened tube isothermal vapor phase epitaxy of (Hg,Cd)Te, and it explains quantitatively all the peculiarities of the epitaxial growth using this method. The model is confronted with experimental data, which correspond satisfactorily to the calculations without any fitting parameters",
publisher = "American Instituts of Physics",
journal = "Applied Physics Letters",
title = "Generalized model of the isothermal vapor phase epitaxy of (Hg,Cd)Te",
volume = "51",
number = "21",
pages = "1699-1701",
doi = "10.1063/1.98548"
}
Đurić, Z. G.,& Piotrowsky, J.. (1987). Generalized model of the isothermal vapor phase epitaxy of (Hg,Cd)Te. in Applied Physics Letters
American Instituts of Physics., 51(21), 1699-1701.
https://doi.org/10.1063/1.98548
Đurić ZG, Piotrowsky J. Generalized model of the isothermal vapor phase epitaxy of (Hg,Cd)Te. in Applied Physics Letters. 1987;51(21):1699-1701.
doi:10.1063/1.98548 .
Đurić, Zoran G., Piotrowsky, Jozef, "Generalized model of the isothermal vapor phase epitaxy of (Hg,Cd)Te" in Applied Physics Letters, 51, no. 21 (1987):1699-1701,
https://doi.org/10.1063/1.98548 . .
