Приказ основних података о документу

dc.creatorĐurić, Zoran G.
dc.date.accessioned2021-04-16T12:01:48Z
dc.date.available2021-04-16T12:01:48Z
dc.date.issued1971
dc.identifier.issn0038-1101
dc.identifier.urihttps://cer.ihtm.bg.ac.rs/handle/123456789/4455
dc.description.abstractStarting from the theory of the influence of pressure upon the semiconductor band diagram, and the Kroemer's proof of existence of different forces Fn and Fp acting upon the electrons and holes, a system of equations is given which defines the band diagram configuration of a p-n junction in thermal equilibrium after a deformation is applied. Results of the mentioned consideration have been used to obtain expressions for the injected minority carrier currents, generation-recombination currents and the current gain β of a common-emitter transistor. Results of the experimental work, giving the relationship between the current gain β and the force F, as well as other parameters (p-n junction depth, curvature radius of the needle, etc.), show a very good quantitative accordance with the theoretical considerations.sr
dc.language.isoensr
dc.publisherElseviersr
dc.rightsrestrictedAccesssr
dc.sourceSolid State Electronicssr
dc.subjecttransistorssr
dc.subjectpressuresr
dc.subjectsemiconductorssr
dc.subjectKroemer's proofsr
dc.subjectthermal equilibriumsr
dc.subjectband diagramsr
dc.subjectp-n junctionsr
dc.titleThe effect of a localized deformation upon the common-emitter transistor current gainsr
dc.typearticlesr
dc.rights.licenseARRsr
dcterms.abstractЂурић, Зоран;
dc.citation.volume14
dc.citation.issue7
dc.citation.spage627
dc.citation.epage637
dc.identifier.doi10.1016/0038-1101(71)90138-9
dc.identifier.scopus2-s2.0-0015098909
dc.type.versionpublishedVersionsr


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Приказ основних података о документу