The effect of a localized deformation upon the common-emitter transistor current gain
Abstract
Starting from the theory of the influence of pressure upon the semiconductor band diagram, and the Kroemer's proof of existence of different forces Fn and Fp acting upon the electrons and holes, a system of equations is given which defines the band diagram configuration of a p-n junction in thermal equilibrium after a deformation is applied. Results of the mentioned consideration have been used to obtain expressions for the injected minority carrier currents, generation-recombination currents and the current gain β of a common-emitter transistor. Results of the experimental work, giving the relationship between the current gain β and the force F, as well as other parameters (p-n junction depth, curvature radius of the needle, etc.), show a very good quantitative accordance with the theoretical considerations.
Keywords:
transistors / pressure / semiconductors / Kroemer's proof / thermal equilibrium / band diagram / p-n junctionSource:
Solid State Electronics, 1971, 14, 7, 627-637Publisher:
- Elsevier
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Institution/Community
IHTMTY - JOUR AU - Đurić, Zoran G. PY - 1971 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/4455 AB - Starting from the theory of the influence of pressure upon the semiconductor band diagram, and the Kroemer's proof of existence of different forces Fn and Fp acting upon the electrons and holes, a system of equations is given which defines the band diagram configuration of a p-n junction in thermal equilibrium after a deformation is applied. Results of the mentioned consideration have been used to obtain expressions for the injected minority carrier currents, generation-recombination currents and the current gain β of a common-emitter transistor. Results of the experimental work, giving the relationship between the current gain β and the force F, as well as other parameters (p-n junction depth, curvature radius of the needle, etc.), show a very good quantitative accordance with the theoretical considerations. PB - Elsevier T2 - Solid State Electronics T1 - The effect of a localized deformation upon the common-emitter transistor current gain VL - 14 IS - 7 SP - 627 EP - 637 DO - 10.1016/0038-1101(71)90138-9 ER -
@article{ author = "Đurić, Zoran G.", year = "1971", abstract = "Starting from the theory of the influence of pressure upon the semiconductor band diagram, and the Kroemer's proof of existence of different forces Fn and Fp acting upon the electrons and holes, a system of equations is given which defines the band diagram configuration of a p-n junction in thermal equilibrium after a deformation is applied. Results of the mentioned consideration have been used to obtain expressions for the injected minority carrier currents, generation-recombination currents and the current gain β of a common-emitter transistor. Results of the experimental work, giving the relationship between the current gain β and the force F, as well as other parameters (p-n junction depth, curvature radius of the needle, etc.), show a very good quantitative accordance with the theoretical considerations.", publisher = "Elsevier", journal = "Solid State Electronics", title = "The effect of a localized deformation upon the common-emitter transistor current gain", volume = "14", number = "7", pages = "627-637", doi = "10.1016/0038-1101(71)90138-9" }
Đurić, Z. G.. (1971). The effect of a localized deformation upon the common-emitter transistor current gain. in Solid State Electronics Elsevier., 14(7), 627-637. https://doi.org/10.1016/0038-1101(71)90138-9
Đurić ZG. The effect of a localized deformation upon the common-emitter transistor current gain. in Solid State Electronics. 1971;14(7):627-637. doi:10.1016/0038-1101(71)90138-9 .
Đurić, Zoran G., "The effect of a localized deformation upon the common-emitter transistor current gain" in Solid State Electronics, 14, no. 7 (1971):627-637, https://doi.org/10.1016/0038-1101(71)90138-9 . .