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dc.creatorĐurić, Zoran G.
dc.creatorSpasojević, Ž.
dc.creatorTjapkin, Dimitrije A.
dc.date.accessioned2021-04-16T05:56:15Z
dc.date.available2021-04-16T05:56:15Z
dc.date.issued1976
dc.identifier.issn0038-1101
dc.identifier.urihttps://cer.ihtm.bg.ac.rs/handle/123456789/4450
dc.description.abstractBy varying the total energy and electrostatic energy functionals which represent an approximate self-consistent solution of Schrödinger's and Poisson's equation, the ground state of electrons is determined in a semiconductor inversion layer. It was assumed that all the electrons in the semiconductor inversion layer are in the ground state. The low frequency capacitance metal-insulator-semiconductor (MIS) capacitors is calculated by the proposed theory and the results are compared with classically calculated capacitance. Numerical results are given for a silicon (111) p-type bulk at 77°K.sr
dc.language.isoensr
dc.publisherElseviersr
dc.rightsrestrictedAccesssr
dc.sourceSolid State Electronicssr
dc.subjectsemiconductor devicessr
dc.subjectelectronsr
dc.subjectSchrödinger's equationsr
dc.subjectPoisson's equationsr
dc.subjectground statesr
dc.subjectwave functionsr
dc.subjectelectronic energysr
dc.titleElectron ground state in the semiconductor inversion layer and low frequency MIS capacitancesr
dc.typearticlesr
dc.rights.licenseARRsr
dcterms.abstractЂурић, Зоран Г.; Тјапкин, Димитрије A.; Спасојевић, Ж.;
dc.citation.volume19
dc.citation.issue11
dc.citation.spage931
dc.citation.epage934
dc.identifier.doi10.1016/0038-1101(76)90105-2
dc.identifier.scopus2-s2.0-0017020226
dc.type.versionpublishedVersionsr


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Приказ основних података о документу