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Investigation of silicon anisotropic etching in alkaline solutions with propanol addition
dc.creator | Jović, Vesna | |
dc.creator | Lamovec, Jelena | |
dc.creator | Popović, Mirjana | |
dc.date.accessioned | 2019-01-30T17:17:58Z | |
dc.date.available | 2019-01-30T17:17:58Z | |
dc.date.issued | 2008 | |
dc.identifier.issn | 2159-1660 | |
dc.identifier.uri | https://cer.ihtm.bg.ac.rs/handle/123456789/423 | |
dc.description.abstract | Different propanol isomers additives to 26 wt. % KOH water solution have been studied. It was stated that addition of both isomers result in changing etching anisotropy of (110) oriented corners on Si LT 100 >. For the same etching depth, IPA addition causes higher corner undercutting than 1-propanol addition. Surface topography is better in IPA containing solutions. | en |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | |
dc.rights | restrictedAccess | |
dc.source | 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings | |
dc.title | Investigation of silicon anisotropic etching in alkaline solutions with propanol addition | en |
dc.type | conferenceObject | |
dc.rights.license | ARR | |
dcterms.abstract | Поповић, Мина; Јовић, Весна; Ламовец, Јелена; | |
dc.citation.spage | 355 | |
dc.citation.epage | 358 | |
dc.citation.other | : 355-358 | |
dc.identifier.doi | 10.1109/ICMEL.2008.4559295 | |
dc.identifier.scopus | 2-s2.0-51749098774 | |
dc.identifier.wos | 000257432600073 | |
dc.type.version | publishedVersion |