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dc.creatorJović, Vesna
dc.creatorLamovec, Jelena
dc.creatorPopović, Mina
dc.date.accessioned2019-01-30T17:17:58Z
dc.date.available2019-01-30T17:17:58Z
dc.date.issued2008
dc.identifier.issn2159-1660
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/423
dc.description.abstractDifferent propanol isomers additives to 26 wt. % KOH water solution have been studied. It was stated that addition of both isomers result in changing etching anisotropy of (110) oriented corners on Si LT 100 >. For the same etching depth, IPA addition causes higher corner undercutting than 1-propanol addition. Surface topography is better in IPA containing solutions.en
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.rightsrestrictedAccess
dc.source26th International Conference on Microelectronics, Vols 1 and 2, Proceedings
dc.titleInvestigation of silicon anisotropic etching in alkaline solutions with propanol additionen
dc.typeconferenceObject
dc.rights.licenseARR
dcterms.abstractПоповић, Мина; Јовић, Весна; Ламовец, Јелена;
dc.citation.spage355
dc.citation.epage358
dc.citation.other: 355-358
dc.identifier.doi10.1109/ICMEL.2008.4559295
dc.identifier.rcubConv_2406
dc.identifier.scopus2-s2.0-51749098774
dc.identifier.wos000257432600073
dc.type.versionpublishedVersion


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