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dc.creatorĐinović, Zoran
dc.creatorTomić, Miloš
dc.creatorManojlović, Lazo
dc.creatorLazić, Žarko
dc.creatorSmiljanić, Milče
dc.date.accessioned2019-01-30T17:17:54Z
dc.date.available2019-01-30T17:17:54Z
dc.date.issued2008
dc.identifier.issn2159-1660
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/422
dc.description.abstractIn this paper we present a contactless technique for thickness measurement of chemically etched Si membranes. This technique is based on low-coherence interferometry performed by single-mode fiber-optic sensing configuration. We are able to measure the thickness of Si membranes with accuracy of about 40 run. We used the proposed technique for the fast measurement of thickness uniformity of central position of Si membranes with overall dimensions of 2x2 mm(2) all around one 3 inch (100) Si wafer with starting thickness of 380 Iim. Additionally, we measured the thickness uniformity of several membranes with central boss by scanning. The accuracy of the technique is about 100 nm.en
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.relationAustrian Science Fund (FWF) - L139-N02
dc.relationIntegrated Microsystems Austria
dc.relationIMA GmbH
dc.rightsrestrictedAccess
dc.source26th International Conference on Microelectronics, Vols 1 and 2, Proceedings
dc.titleNon-contact measurement of thickness uniformity of chemically etched Si membranes by fiber-optic low-coherence interferometryen
dc.typeconferenceObject
dc.rights.licenseARR
dcterms.abstractМанојловиц, Лазо; Лазић, Жарко; Смиљанић, Милче; Ђиновић, Зоран; Томиц, Милос;
dc.citation.spage321
dc.citation.other: 321
dc.identifier.doi10.1109/ICMEL.2008.4559286
dc.identifier.rcubConv_2405
dc.identifier.scopus2-s2.0-51749087483
dc.identifier.wos000257432600065
dc.type.versionpublishedVersion


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