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Sputtered nickel coverage of the SiO2 nano-step
dc.creator | Sarajlić, Milija | |
dc.creator | Vasiljević-Radović, Dana | |
dc.creator | Ramovic, R. | |
dc.creator | Tanasković, Dragan | |
dc.creator | Đurić, Zoran G. | |
dc.date.accessioned | 2019-01-30T17:17:52Z | |
dc.date.available | 2019-01-30T17:17:52Z | |
dc.date.issued | 2008 | |
dc.identifier.issn | 2159-1660 | |
dc.identifier.uri | https://cer.ihtm.bg.ac.rs/handle/123456789/420 | |
dc.description.abstract | In this paper we give a survey of the problems that we encountered during deposition and examination of the Ni layers on SiO2 nano-step. We made nano-layer Of SiO2 and deposited Ni film on top of it thus making particular structure in nano dimensions by utilizing microelectronics equipment. This research and solutions that we made help in understanding feasibility of transition from microelectronics to nanotechnology. Employment of Ni layers is motivated by the increased importance of the nickel silicide films in ULSI. | en |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | |
dc.rights | restrictedAccess | |
dc.source | 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings | |
dc.title | Sputtered nickel coverage of the SiO2 nano-step | en |
dc.type | conferenceObject | |
dc.rights.license | ARR | |
dcterms.abstract | Сарајлић, Милија; Танасковић, Драган; Рамовиц, Р.; Ђурић, Зоран Г.; Васиљевић-Радовић, Дана; | |
dc.citation.spage | 111 | |
dc.citation.epage | 114 | |
dc.citation.other | : 111-114 | |
dc.identifier.doi | 10.1109/ICMEL.2008.4559235 | |
dc.identifier.scopus | 2-s2.0-51749124484 | |
dc.identifier.wos | 000257432600021 | |
dc.type.version | publishedVersion |