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dc.creatorSarajlić, Milija
dc.creatorVasiljević-Radović, Dana
dc.creatorRamovic, R.
dc.creatorTanasković, Dragan
dc.creatorĐurić, Zoran G.
dc.date.accessioned2019-01-30T17:17:52Z
dc.date.available2019-01-30T17:17:52Z
dc.date.issued2008
dc.identifier.issn2159-1660
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/420
dc.description.abstractIn this paper we give a survey of the problems that we encountered during deposition and examination of the Ni layers on SiO2 nano-step. We made nano-layer Of SiO2 and deposited Ni film on top of it thus making particular structure in nano dimensions by utilizing microelectronics equipment. This research and solutions that we made help in understanding feasibility of transition from microelectronics to nanotechnology. Employment of Ni layers is motivated by the increased importance of the nickel silicide films in ULSI.en
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.rightsrestrictedAccess
dc.source26th International Conference on Microelectronics, Vols 1 and 2, Proceedings
dc.titleSputtered nickel coverage of the SiO2 nano-stepen
dc.typeconferenceObject
dc.rights.licenseARR
dcterms.abstractСарајлић, Милија; Танасковић, Драган; Рамовиц, Р.; Ђурић, Зоран Г.; Васиљевић-Радовић, Дана;
dc.citation.spage111
dc.citation.epage114
dc.citation.other: 111-114
dc.identifier.doi10.1109/ICMEL.2008.4559235
dc.identifier.rcubConv_2403
dc.identifier.scopus2-s2.0-51749124484
dc.identifier.wos000257432600021
dc.type.versionpublishedVersion


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