Sputtered nickel coverage of the SiO2 nano-step
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2008
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In this paper we give a survey of the problems that we encountered during deposition and examination of the Ni layers on SiO2 nano-step. We made nano-layer Of SiO2 and deposited Ni film on top of it thus making particular structure in nano dimensions by utilizing microelectronics equipment. This research and solutions that we made help in understanding feasibility of transition from microelectronics to nanotechnology. Employment of Ni layers is motivated by the increased importance of the nickel silicide films in ULSI.
Izvor:
26th International Conference on Microelectronics, Vols 1 and 2, Proceedings, 2008, 111-114Izdavač:
- Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/ICMEL.2008.4559235
ISSN: 2159-1660
WoS: 000257432600021
Scopus: 2-s2.0-51749124484
Institucija/grupa
IHTMTY - CONF AU - Sarajlić, Milija AU - Vasiljević-Radović, Dana AU - Ramovic, R. AU - Tanasković, Dragan AU - Đurić, Zoran G. PY - 2008 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/420 AB - In this paper we give a survey of the problems that we encountered during deposition and examination of the Ni layers on SiO2 nano-step. We made nano-layer Of SiO2 and deposited Ni film on top of it thus making particular structure in nano dimensions by utilizing microelectronics equipment. This research and solutions that we made help in understanding feasibility of transition from microelectronics to nanotechnology. Employment of Ni layers is motivated by the increased importance of the nickel silicide films in ULSI. PB - Institute of Electrical and Electronics Engineers Inc. C3 - 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings T1 - Sputtered nickel coverage of the SiO2 nano-step SP - 111 EP - 114 DO - 10.1109/ICMEL.2008.4559235 ER -
@conference{ author = "Sarajlić, Milija and Vasiljević-Radović, Dana and Ramovic, R. and Tanasković, Dragan and Đurić, Zoran G.", year = "2008", abstract = "In this paper we give a survey of the problems that we encountered during deposition and examination of the Ni layers on SiO2 nano-step. We made nano-layer Of SiO2 and deposited Ni film on top of it thus making particular structure in nano dimensions by utilizing microelectronics equipment. This research and solutions that we made help in understanding feasibility of transition from microelectronics to nanotechnology. Employment of Ni layers is motivated by the increased importance of the nickel silicide films in ULSI.", publisher = "Institute of Electrical and Electronics Engineers Inc.", journal = "26th International Conference on Microelectronics, Vols 1 and 2, Proceedings", title = "Sputtered nickel coverage of the SiO2 nano-step", pages = "111-114", doi = "10.1109/ICMEL.2008.4559235" }
Sarajlić, M., Vasiljević-Radović, D., Ramovic, R., Tanasković, D.,& Đurić, Z. G.. (2008). Sputtered nickel coverage of the SiO2 nano-step. in 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings Institute of Electrical and Electronics Engineers Inc.., 111-114. https://doi.org/10.1109/ICMEL.2008.4559235
Sarajlić M, Vasiljević-Radović D, Ramovic R, Tanasković D, Đurić ZG. Sputtered nickel coverage of the SiO2 nano-step. in 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings. 2008;:111-114. doi:10.1109/ICMEL.2008.4559235 .
Sarajlić, Milija, Vasiljević-Radović, Dana, Ramovic, R., Tanasković, Dragan, Đurić, Zoran G., "Sputtered nickel coverage of the SiO2 nano-step" in 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings (2008):111-114, https://doi.org/10.1109/ICMEL.2008.4559235 . .