In this paper we give a survey of the problems that we encountered during deposition and examination of the Ni layers on SiO2 nano-step. We made nano-layer Of SiO2 and deposited Ni film on top of it thus making particular structure in nano dimensions by utilizing microelectronics equipment. This research and solutions that we made help in understanding feasibility of transition from microelectronics to nanotechnology. Employment of Ni layers is motivated by the increased importance of the nickel silicide films in ULSI.
Извор:
26th International Conference on Microelectronics, Vols 1 and 2, Proceedings, 2008, 111-114
Издавач:
Institute of Electrical and Electronics Engineers Inc.
TY - CONF
AU - Sarajlić, Milija
AU - Vasiljević-Radović, Dana
AU - Ramovic, R.
AU - Tanasković, Dragan
AU - Đurić, Zoran G.
PY - 2008
UR - https://cer.ihtm.bg.ac.rs/handle/123456789/420
AB - In this paper we give a survey of the problems that we encountered during deposition and examination of the Ni layers on SiO2 nano-step. We made nano-layer Of SiO2 and deposited Ni film on top of it thus making particular structure in nano dimensions by utilizing microelectronics equipment. This research and solutions that we made help in understanding feasibility of transition from microelectronics to nanotechnology. Employment of Ni layers is motivated by the increased importance of the nickel silicide films in ULSI.
PB - Institute of Electrical and Electronics Engineers Inc.
C3 - 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings
T1 - Sputtered nickel coverage of the SiO2 nano-step
SP - 111
EP - 114
DO - 10.1109/ICMEL.2008.4559235
ER -
@conference{
author = "Sarajlić, Milija and Vasiljević-Radović, Dana and Ramovic, R. and Tanasković, Dragan and Đurić, Zoran G.",
year = "2008",
abstract = "In this paper we give a survey of the problems that we encountered during deposition and examination of the Ni layers on SiO2 nano-step. We made nano-layer Of SiO2 and deposited Ni film on top of it thus making particular structure in nano dimensions by utilizing microelectronics equipment. This research and solutions that we made help in understanding feasibility of transition from microelectronics to nanotechnology. Employment of Ni layers is motivated by the increased importance of the nickel silicide films in ULSI.",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
journal = "26th International Conference on Microelectronics, Vols 1 and 2, Proceedings",
title = "Sputtered nickel coverage of the SiO2 nano-step",
pages = "111-114",
doi = "10.1109/ICMEL.2008.4559235"
}
Sarajlić, M., Vasiljević-Radović, D., Ramovic, R., Tanasković, D.,& Đurić, Z. G.. (2008). Sputtered nickel coverage of the SiO2 nano-step. in 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings
Institute of Electrical and Electronics Engineers Inc.., 111-114.
https://doi.org/10.1109/ICMEL.2008.4559235
Sarajlić M, Vasiljević-Radović D, Ramovic R, Tanasković D, Đurić ZG. Sputtered nickel coverage of the SiO2 nano-step. in 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings. 2008;:111-114.
doi:10.1109/ICMEL.2008.4559235 .
Sarajlić, Milija, Vasiljević-Radović, Dana, Ramovic, R., Tanasković, Dragan, Đurić, Zoran G., "Sputtered nickel coverage of the SiO2 nano-step" in 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings (2008):111-114,
https://doi.org/10.1109/ICMEL.2008.4559235 . .
