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Sputtered nickel coverage of the SiO2 nano-step

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2008
Authors
Sarajlić, Milija
Vasiljević-Radović, Dana
Ramovic, R.
Tanasković, Dragan
Đurić, Zoran G.
Conference object (Published version)
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Abstract
In this paper we give a survey of the problems that we encountered during deposition and examination of the Ni layers on SiO2 nano-step. We made nano-layer Of SiO2 and deposited Ni film on top of it thus making particular structure in nano dimensions by utilizing microelectronics equipment. This research and solutions that we made help in understanding feasibility of transition from microelectronics to nanotechnology. Employment of Ni layers is motivated by the increased importance of the nickel silicide films in ULSI.
Source:
26th International Conference on Microelectronics, Vols 1 and 2, Proceedings, 2008, 111-114
Publisher:
  • Institute of Electrical and Electronics Engineers Inc.

DOI: 10.1109/ICMEL.2008.4559235

ISSN: 2159-1660

WoS: 000257432600021

Scopus: 2-s2.0-51749124484
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URI
http://cer.ihtm.bg.ac.rs/handle/123456789/420
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IHTM

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