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dc.creatorSarajlić, Milija
dc.creatorRamovic, Rifat
dc.date.accessioned2019-01-30T17:17:50Z
dc.date.available2019-01-30T17:17:50Z
dc.date.issued2008
dc.identifier.issn0217-9792
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/417
dc.description.abstractHere, a new approach for calculating the triggering drain bias at the onset of the kink effect, kink voltage, V-kink, for PD SOI NMOS devices utilizing electron drift properties in the channel is given. This approach directly relates electron mobility in the channel to the kink effect and enables one to determine kink voltage knowing the device technology. It also gives the possibility for calculating mobility from the kink voltage. Theory is compared to the previously published experimental results and based on this match, the behavior of the kink voltage for PD SOI NMOS components for various technology parameters is predicted. Explanation for the appearance of the kink in the volt regime below the band gap of silicon is also given. From this consideration, design rules for PD SOI NMOS devices are derived in order to soothe the kink effect.en
dc.publisherWorld Scientific Publ Co Pte Ltd, Singapore
dc.rightsrestrictedAccess
dc.sourceInternational Journal of Modern Physics B
dc.subjectSOIen
dc.subjectSOI MOSFETen
dc.subjectkink effecten
dc.subjectimpact ionizationen
dc.subjectparasitic bipolar deviceen
dc.titleOn the relationship between effective electron mobility and kink effect for short-channel PD SOINMOS devicesen
dc.typearticle
dc.rights.licenseARR
dcterms.abstractРамовиц, Рифат; Сарајлић, Милија;
dc.citation.volume22
dc.citation.issue16
dc.citation.spage2599
dc.citation.epage2610
dc.citation.other22(16): 2599-2610
dc.citation.rankM23
dc.identifier.doi10.1142/S0217979208039678
dc.identifier.rcubConv_2399
dc.identifier.scopus2-s2.0-48049120857
dc.identifier.wos000257298200010
dc.type.versionpublishedVersion


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