On the relationship between effective electron mobility and kink effect for short-channel PD SOINMOS devices
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2008
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Prikaz svih podataka o dokumentuApstrakt
Here, a new approach for calculating the triggering drain bias at the onset of the kink effect, kink voltage, V-kink, for PD SOI NMOS devices utilizing electron drift properties in the channel is given. This approach directly relates electron mobility in the channel to the kink effect and enables one to determine kink voltage knowing the device technology. It also gives the possibility for calculating mobility from the kink voltage. Theory is compared to the previously published experimental results and based on this match, the behavior of the kink voltage for PD SOI NMOS components for various technology parameters is predicted. Explanation for the appearance of the kink in the volt regime below the band gap of silicon is also given. From this consideration, design rules for PD SOI NMOS devices are derived in order to soothe the kink effect.
Ključne reči:
SOI / SOI MOSFET / kink effect / impact ionization / parasitic bipolar deviceIzvor:
International Journal of Modern Physics B, 2008, 22, 16, 2599-2610Izdavač:
- World Scientific Publ Co Pte Ltd, Singapore
DOI: 10.1142/S0217979208039678
ISSN: 0217-9792
WoS: 000257298200010
Scopus: 2-s2.0-48049120857
Institucija/grupa
IHTMTY - JOUR AU - Sarajlić, Milija AU - Ramovic, Rifat PY - 2008 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/417 AB - Here, a new approach for calculating the triggering drain bias at the onset of the kink effect, kink voltage, V-kink, for PD SOI NMOS devices utilizing electron drift properties in the channel is given. This approach directly relates electron mobility in the channel to the kink effect and enables one to determine kink voltage knowing the device technology. It also gives the possibility for calculating mobility from the kink voltage. Theory is compared to the previously published experimental results and based on this match, the behavior of the kink voltage for PD SOI NMOS components for various technology parameters is predicted. Explanation for the appearance of the kink in the volt regime below the band gap of silicon is also given. From this consideration, design rules for PD SOI NMOS devices are derived in order to soothe the kink effect. PB - World Scientific Publ Co Pte Ltd, Singapore T2 - International Journal of Modern Physics B T1 - On the relationship between effective electron mobility and kink effect for short-channel PD SOINMOS devices VL - 22 IS - 16 SP - 2599 EP - 2610 DO - 10.1142/S0217979208039678 ER -
@article{ author = "Sarajlić, Milija and Ramovic, Rifat", year = "2008", abstract = "Here, a new approach for calculating the triggering drain bias at the onset of the kink effect, kink voltage, V-kink, for PD SOI NMOS devices utilizing electron drift properties in the channel is given. This approach directly relates electron mobility in the channel to the kink effect and enables one to determine kink voltage knowing the device technology. It also gives the possibility for calculating mobility from the kink voltage. Theory is compared to the previously published experimental results and based on this match, the behavior of the kink voltage for PD SOI NMOS components for various technology parameters is predicted. Explanation for the appearance of the kink in the volt regime below the band gap of silicon is also given. From this consideration, design rules for PD SOI NMOS devices are derived in order to soothe the kink effect.", publisher = "World Scientific Publ Co Pte Ltd, Singapore", journal = "International Journal of Modern Physics B", title = "On the relationship between effective electron mobility and kink effect for short-channel PD SOINMOS devices", volume = "22", number = "16", pages = "2599-2610", doi = "10.1142/S0217979208039678" }
Sarajlić, M.,& Ramovic, R.. (2008). On the relationship between effective electron mobility and kink effect for short-channel PD SOINMOS devices. in International Journal of Modern Physics B World Scientific Publ Co Pte Ltd, Singapore., 22(16), 2599-2610. https://doi.org/10.1142/S0217979208039678
Sarajlić M, Ramovic R. On the relationship between effective electron mobility and kink effect for short-channel PD SOINMOS devices. in International Journal of Modern Physics B. 2008;22(16):2599-2610. doi:10.1142/S0217979208039678 .
Sarajlić, Milija, Ramovic, Rifat, "On the relationship between effective electron mobility and kink effect for short-channel PD SOINMOS devices" in International Journal of Modern Physics B, 22, no. 16 (2008):2599-2610, https://doi.org/10.1142/S0217979208039678 . .