CER - Centralni Repozitorijum IHTM-a
Institut za hemiju, tehnologiju i metalurgiju
    • English
    • Српски
    • Српски (Serbia)
  • Srpski (latinica) 
    • Engleski
    • Srpski (ćirilica)
    • Srpski (latinica)
  • Prijava
Pregled rada 
  •   CER - Repozitorijum Instituta za hemiju, tehnologiju i metalurgiju
  • IHTM
  • Radovi istraživača / Researchers' publications
  • Pregled rada
  •   CER - Repozitorijum Instituta za hemiju, tehnologiju i metalurgiju
  • IHTM
  • Radovi istraživača / Researchers' publications
  • Pregled rada
JavaScript is disabled for your browser. Some features of this site may not work without it.

On the relationship between effective electron mobility and kink effect for short-channel PD SOINMOS devices

Samo za registrovane korisnike
2008
Autori
Sarajlić, Milija
Ramovic, Rifat
Članak u časopisu (Objavljena verzija)
Metapodaci
Prikaz svih podataka o dokumentu
Apstrakt
Here, a new approach for calculating the triggering drain bias at the onset of the kink effect, kink voltage, V-kink, for PD SOI NMOS devices utilizing electron drift properties in the channel is given. This approach directly relates electron mobility in the channel to the kink effect and enables one to determine kink voltage knowing the device technology. It also gives the possibility for calculating mobility from the kink voltage. Theory is compared to the previously published experimental results and based on this match, the behavior of the kink voltage for PD SOI NMOS components for various technology parameters is predicted. Explanation for the appearance of the kink in the volt regime below the band gap of silicon is also given. From this consideration, design rules for PD SOI NMOS devices are derived in order to soothe the kink effect.
Ključne reči:
SOI / SOI MOSFET / kink effect / impact ionization / parasitic bipolar device
Izvor:
International Journal of Modern Physics B, 2008, 22, 16, 2599-2610
Izdavač:
  • World Scientific Publ Co Pte Ltd, Singapore

DOI: 10.1142/S0217979208039678

ISSN: 0217-9792

WoS: 000257298200010

Scopus: 2-s2.0-48049120857
[ Google Scholar ]
2
2
URI
http://cer.ihtm.bg.ac.rs/handle/123456789/417
Kolekcije
  • Radovi istraživača / Researchers' publications
Institucija
IHTM
TY  - JOUR
AU  - Sarajlić, Milija
AU  - Ramovic, Rifat
PY  - 2008
UR  - http://cer.ihtm.bg.ac.rs/handle/123456789/417
AB  - Here, a new approach for calculating the triggering drain bias at the onset of the kink effect, kink voltage, V-kink, for PD SOI NMOS devices utilizing electron drift properties in the channel is given. This approach directly relates electron mobility in the channel to the kink effect and enables one to determine kink voltage knowing the device technology. It also gives the possibility for calculating mobility from the kink voltage. Theory is compared to the previously published experimental results and based on this match, the behavior of the kink voltage for PD SOI NMOS components for various technology parameters is predicted. Explanation for the appearance of the kink in the volt regime below the band gap of silicon is also given. From this consideration, design rules for PD SOI NMOS devices are derived in order to soothe the kink effect.
PB  - World Scientific Publ Co Pte Ltd, Singapore
T2  - International Journal of Modern Physics B
T1  - On the relationship between effective electron mobility and kink effect for short-channel PD SOINMOS devices
VL  - 22
IS  - 16
SP  - 2599
EP  - 2610
DO  - 10.1142/S0217979208039678
ER  - 
@article{
author = "Sarajlić, Milija and Ramovic, Rifat",
year = "2008",
url = "http://cer.ihtm.bg.ac.rs/handle/123456789/417",
abstract = "Here, a new approach for calculating the triggering drain bias at the onset of the kink effect, kink voltage, V-kink, for PD SOI NMOS devices utilizing electron drift properties in the channel is given. This approach directly relates electron mobility in the channel to the kink effect and enables one to determine kink voltage knowing the device technology. It also gives the possibility for calculating mobility from the kink voltage. Theory is compared to the previously published experimental results and based on this match, the behavior of the kink voltage for PD SOI NMOS components for various technology parameters is predicted. Explanation for the appearance of the kink in the volt regime below the band gap of silicon is also given. From this consideration, design rules for PD SOI NMOS devices are derived in order to soothe the kink effect.",
publisher = "World Scientific Publ Co Pte Ltd, Singapore",
journal = "International Journal of Modern Physics B",
title = "On the relationship between effective electron mobility and kink effect for short-channel PD SOINMOS devices",
volume = "22",
number = "16",
pages = "2599-2610",
doi = "10.1142/S0217979208039678"
}
Sarajlić M, Ramovic R. On the relationship between effective electron mobility and kink effect for short-channel PD SOINMOS devices. International Journal of Modern Physics B. 2008;22(16):2599-2610
Sarajlić, M.,& Ramovic, R. (2008). On the relationship between effective electron mobility and kink effect for short-channel PD SOINMOS devices.
International Journal of Modern Physics BWorld Scientific Publ Co Pte Ltd, Singapore., 22(16), 2599-2610.
https://doi.org/10.1142/S0217979208039678
Sarajlić Milija, Ramovic Rifat, "On the relationship between effective electron mobility and kink effect for short-channel PD SOINMOS devices" 22, no. 16 (2008):2599-2610,
https://doi.org/10.1142/S0217979208039678 .

DSpace software copyright © 2002-2015  DuraSpace
O Centralnom repozitorijumu (CeR) | Pošaljite zapažanja

OpenAIRERCUB
 

 

Kompletan repozitorijumInstitucijeAutoriNasloviTemeOva institucijaAutoriNasloviTeme

Statistika

Pregled statistika

DSpace software copyright © 2002-2015  DuraSpace
O Centralnom repozitorijumu (CeR) | Pošaljite zapažanja

OpenAIRERCUB