On the relationship between effective electron mobility and kink effect for short-channel PD SOINMOS devices
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Here, a new approach for calculating the triggering drain bias at the onset of the kink effect, kink voltage, V-kink, for PD SOI NMOS devices utilizing electron drift properties in the channel is given. This approach directly relates electron mobility in the channel to the kink effect and enables one to determine kink voltage knowing the device technology. It also gives the possibility for calculating mobility from the kink voltage. Theory is compared to the previously published experimental results and based on this match, the behavior of the kink voltage for PD SOI NMOS components for various technology parameters is predicted. Explanation for the appearance of the kink in the volt regime below the band gap of silicon is also given. From this consideration, design rules for PD SOI NMOS devices are derived in order to soothe the kink effect.
Кључне речи:SOI / SOI MOSFET / kink effect / impact ionization / parasitic bipolar device
Извор:International Journal of Modern Physics B, 2008, 22, 16, 2599-2610
- World Scientific Publ Co Pte Ltd, Singapore