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dc.creatorGarcia, N.
dc.creatorWang, Hai
dc.creatorCheng, Hao
dc.creatorNikolić, Nebojša D.
dc.date.accessioned2021-01-21T13:42:51Z
dc.date.available2021-01-21T13:42:51Z
dc.date.issued2003
dc.identifier.issn0018-9464
dc.identifier.urihttps://cer.ihtm.bg.ac.rs/handle/123456789/4128
dc.description.abstractThe authors present experiments and discuss recent results on ballistic magnetotesistance in nanometer size (on the order of 1 to 10 nm) nanocontacts grown by electrodeposition in thin wires and in thin films of a few nanometer thickness. Very large values of magnetoresistance are shown (up to 4000% and more could be obtained). These experiments as well as others are explained in terms of a dead magnetic layer appearing at the nanocontact. The experiments are also discussed in the context of magnetostriction effects, in the light of existing first principle calculations and observed inverse magnetoresistive effects.sr
dc.language.isoensr
dc.publisherInstitute of Electrical and Electronics Engineers, Inc.sr
dc.relationSpanish DGICyTsr
dc.rightsrestrictedAccesssr
dc.sourceIEEE Transactions on Magneticssr
dc.subjectElectrodepositionsr
dc.subjectmagnetoresistancesr
dc.subjectmagnetostrictionsr
dc.subjectnanocontactsr
dc.titleBallistic magnetoresistance versus magnetostriction effects in electrodeposited nanocontacts at room temperaturesr
dc.typearticlesr
dc.rights.licenseARRsr
dcterms.abstractWанг, Хаи; Николић, Небојша Д.; Цхенг, Хао; Гарциа, Н.; Баллистиц магнеторесистанце версус магнетострицтион еффецтс ин елецтродепоситед наноцонтацтс ат роом температуре; Баллистиц магнеторесистанце версус магнетострицтион еффецтс ин елецтродепоситед наноцонтацтс ат роом температуре;
dc.citation.volume39, 2776-2781
dc.citation.volume39
dc.citation.spage2776
dc.citation.epage2781
dc.citation.rankM21
dc.identifier.doi10.1109/TMAG.2003.815708
dc.identifier.scopus2-s2.0-0141987770
dc.type.versionpublishedVersionsr


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