The authors present experiments and discuss recent results on ballistic magnetotesistance in nanometer size (on the order of 1 to 10 nm) nanocontacts grown by electrodeposition in
thin wires and in thin films of a few nanometer thickness. Very large values of magnetoresistance are shown (up to 4000% and more could be obtained). These experiments as well as others
are explained in terms of a dead magnetic layer appearing at the nanocontact. The experiments are also discussed in the context of magnetostriction effects, in the light of existing first principle
calculations and observed inverse magnetoresistive effects.
TY - JOUR
AU - Garcia, N.
AU - Wang, Hai
AU - Cheng, Hao
AU - Nikolić, Nebojša D.
PY - 2003
UR - https://cer.ihtm.bg.ac.rs/handle/123456789/4128
AB - The authors present experiments and discuss recent results on ballistic magnetotesistance in nanometer size (on the order of 1 to 10 nm) nanocontacts grown by electrodeposition in
thin wires and in thin films of a few nanometer thickness. Very large values of magnetoresistance are shown (up to 4000% and more could be obtained). These experiments as well as others
are explained in terms of a dead magnetic layer appearing at the nanocontact. The experiments are also discussed in the context of magnetostriction effects, in the light of existing first principle
calculations and observed inverse magnetoresistive effects.
PB - Institute of Electrical and Electronics Engineers, Inc.
T2 - IEEE Transactions on Magnetics
T1 - Ballistic magnetoresistance versus magnetostriction effects in electrodeposited nanocontacts at room temperature
VL - 39, 2776-2781
VL - 39
SP - 2776
EP - 2781
DO - 10.1109/TMAG.2003.815708
ER -
@article{
author = "Garcia, N. and Wang, Hai and Cheng, Hao and Nikolić, Nebojša D.",
year = "2003",
abstract = "The authors present experiments and discuss recent results on ballistic magnetotesistance in nanometer size (on the order of 1 to 10 nm) nanocontacts grown by electrodeposition in
thin wires and in thin films of a few nanometer thickness. Very large values of magnetoresistance are shown (up to 4000% and more could be obtained). These experiments as well as others
are explained in terms of a dead magnetic layer appearing at the nanocontact. The experiments are also discussed in the context of magnetostriction effects, in the light of existing first principle
calculations and observed inverse magnetoresistive effects.",
publisher = "Institute of Electrical and Electronics Engineers, Inc.",
journal = "IEEE Transactions on Magnetics",
title = "Ballistic magnetoresistance versus magnetostriction effects in electrodeposited nanocontacts at room temperature",
volume = "39, 2776-2781, 39",
pages = "2776-2781",
doi = "10.1109/TMAG.2003.815708"
}
Garcia, N., Wang, H., Cheng, H.,& Nikolić, N. D.. (2003). Ballistic magnetoresistance versus magnetostriction effects in electrodeposited nanocontacts at room temperature. in IEEE Transactions on Magnetics
Institute of Electrical and Electronics Engineers, Inc.., 39, 2776-2781, 2776-2781.
https://doi.org/10.1109/TMAG.2003.815708
Garcia N, Wang H, Cheng H, Nikolić ND. Ballistic magnetoresistance versus magnetostriction effects in electrodeposited nanocontacts at room temperature. in IEEE Transactions on Magnetics. 2003;39, 2776-2781:2776-2781.
doi:10.1109/TMAG.2003.815708 .
Garcia, N., Wang, Hai, Cheng, Hao, Nikolić, Nebojša D., "Ballistic magnetoresistance versus magnetostriction effects in electrodeposited nanocontacts at room temperature" in IEEE Transactions on Magnetics, 39, 2776-2781 (2003):2776-2781,
https://doi.org/10.1109/TMAG.2003.815708 . .
