Antimony doped barium-stannate dense ceramic materials were synthesized using spark plasma sintering technique out of mechanically activated precursor powders. The influence of various Sb concentrations (x =0.00 – 0.10) on properties of BaSn1-xSbxO3 ceramics was investigated. Relative densities of prepared samples were in the range of (79–96) %. TEM analysis revealed the presence of many dislocations in undoped BaSnO3, and their significant reduction upon doping with Sb. All samples except BaSn0.92Sb0.08O3 exhibit non-linear I-U characteristic, typical for semiconductors with potential barrier at grain boundaries. Low angle grain boundaries found only in BaSn0.92Sb0.08O3 caused the loss of potential barrier at grain boundaries which was confirmed by AC impedance spectroscopy measurements. Consequently, BaSn0.92Sb0.08O3 showed the lowest electrical resistivity and linear I-U characteristic. UV–vis analysis confirmed the increasing of band gap (Burstein–Moss shift) values in all doped sa...mples.
TY - JOUR
AU - Vukašinović, Jelena
AU - Počuča-Nešić, Milica
AU - Luković Golić, Danijela
AU - Ribić, Vesna
AU - Branković, Zorica
AU - Savić, Slavica M.
AU - Dapčević, Aleksandra
AU - Bernik, Slavko
AU - Podlogar, Matejka
AU - Kocen, Matej
AU - Rapljenović, Željko
AU - Ivek, Tomislav
AU - Lazović, Vladimir
AU - Dojčinović, Biljana
AU - Branković, Goran
PY - 2020
UR - http://cer.ihtm.bg.ac.rs/handle/123456789/3628
AB - Antimony doped barium-stannate dense ceramic materials were synthesized using spark plasma sintering technique out of mechanically activated precursor powders. The influence of various Sb concentrations (x =0.00 – 0.10) on properties of BaSn1-xSbxO3 ceramics was investigated. Relative densities of prepared samples were in the range of (79–96) %. TEM analysis revealed the presence of many dislocations in undoped BaSnO3, and their significant reduction upon doping with Sb. All samples except BaSn0.92Sb0.08O3 exhibit non-linear I-U characteristic, typical for semiconductors with potential barrier at grain boundaries. Low angle grain boundaries found only in BaSn0.92Sb0.08O3 caused the loss of potential barrier at grain boundaries which was confirmed by AC impedance spectroscopy measurements. Consequently, BaSn0.92Sb0.08O3 showed the lowest electrical resistivity and linear I-U characteristic. UV–vis analysis confirmed the increasing of band gap (Burstein–Moss shift) values in all doped samples.
PB - Elsevier
T2 - Journal of the European Ceramic Society
T1 - The structural, electrical and optical properties of spark plasma sintered BaSn1-xSbxO3 ceramics
VL - 40
IS - 15
SP - 5566
EP - 5575
DO - 10.1016/j.jeurceramsoc.2020.06.062
ER -
@article{
author = "Vukašinović, Jelena and Počuča-Nešić, Milica and Luković Golić, Danijela and Ribić, Vesna and Branković, Zorica and Savić, Slavica M. and Dapčević, Aleksandra and Bernik, Slavko and Podlogar, Matejka and Kocen, Matej and Rapljenović, Željko and Ivek, Tomislav and Lazović, Vladimir and Dojčinović, Biljana and Branković, Goran",
year = "2020",
url = "http://cer.ihtm.bg.ac.rs/handle/123456789/3628",
abstract = "Antimony doped barium-stannate dense ceramic materials were synthesized using spark plasma sintering technique out of mechanically activated precursor powders. The influence of various Sb concentrations (x =0.00 – 0.10) on properties of BaSn1-xSbxO3 ceramics was investigated. Relative densities of prepared samples were in the range of (79–96) %. TEM analysis revealed the presence of many dislocations in undoped BaSnO3, and their significant reduction upon doping with Sb. All samples except BaSn0.92Sb0.08O3 exhibit non-linear I-U characteristic, typical for semiconductors with potential barrier at grain boundaries. Low angle grain boundaries found only in BaSn0.92Sb0.08O3 caused the loss of potential barrier at grain boundaries which was confirmed by AC impedance spectroscopy measurements. Consequently, BaSn0.92Sb0.08O3 showed the lowest electrical resistivity and linear I-U characteristic. UV–vis analysis confirmed the increasing of band gap (Burstein–Moss shift) values in all doped samples.",
publisher = "Elsevier",
journal = "Journal of the European Ceramic Society",
title = "The structural, electrical and optical properties of spark plasma sintered BaSn1-xSbxO3 ceramics",
volume = "40",
number = "15",
pages = "5566-5575",
doi = "10.1016/j.jeurceramsoc.2020.06.062"
}
Vukašinović, J., Počuča-Nešić, M., Luković Golić, D., Ribić, V., Branković, Z., Savić, S. M., Dapčević, A., Bernik, S., Podlogar, M., Kocen, M., Rapljenović, Ž., Ivek, T., Lazović, V., Dojčinović, B.,& Branković, G. (2020). The structural, electrical and optical properties of spark plasma sintered BaSn1-xSbxO3 ceramics.
Journal of the European Ceramic Society
Elsevier., 40(15), 5566-5575.
https://doi.org/10.1016/j.jeurceramsoc.2020.06.062
Vukašinović J, Počuča-Nešić M, Luković Golić D, Ribić V, Branković Z, Savić SM, Dapčević A, Bernik S, Podlogar M, Kocen M, Rapljenović Ž, Ivek T, Lazović V, Dojčinović B, Branković G. The structural, electrical and optical properties of spark plasma sintered BaSn1-xSbxO3 ceramics. Journal of the European Ceramic Society. 2020;40(15):5566-5575
Vukašinović Jelena, Počuča-Nešić Milica, Luković Golić Danijela, Ribić Vesna, Branković Zorica, Savić Slavica M., Dapčević Aleksandra, Bernik Slavko, Podlogar Matejka, Kocen Matej, Rapljenović Željko, Ivek Tomislav, Lazović Vladimir, Dojčinović Biljana, Branković Goran, "The structural, electrical and optical properties of spark plasma sintered BaSn1-xSbxO3 ceramics" Journal of the European Ceramic Society, 40, no. 15 (2020):5566-5575,
https://doi.org/10.1016/j.jeurceramsoc.2020.06.062 .
