Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C
Autori
Smiljanić, Milče M.Lazić, Žarko
Jović, Vesna
Radjenović, Branislav
Radmilović-Radjenović, Marija
Članak u časopisu (Objavljena verzija)
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
This paper presents etching of convex corners with sides along <n10> and <100> crystallographic directions in a 25 wt% tetramethylammonium hydroxide (TMAH) water solution at 80 °C. We analyzed parallelograms as the mask patterns for anisotropic wet etching of Si (100). The sides of the parallelograms were designed along <n10> and <100> crystallographic directions (1 < n < 8). The acute corners of islands in the masking layer formed by <n10> and <100> crystallographic directions were smaller than 45°. All the crystallographic planes that appeared during etching in the experiment were determined. We found that the obtained types of 3D silicon shape sustain when n > 2. The convex corners were not distorted during etching. Therefore, no convex corner compensation is necessary. We fabricated three matrices of parallelograms with sides along crystallographic directions <310> and <100> as examples for possible applications. Additionally, the etching of matrices was simulated by the level set ...method. We obtained a good agreement between experiments and simulations.
Ključne reči:
No convex corner compensation / Parallelogram / Silicon / Wet etching / Tetramethylammonium hydroxide (TMAH)Izvor:
Micromachines, 2020, 11, 3, 253-Izdavač:
- MDPI
Finansiranje / projekti:
- The authors acknowledge funding provided by the Institute of Chemistry, Technology and Metallurgy and the Institute of Physics Belgrade, through the grant by the Ministry of Education, Science and Technological Development of the Republic of Serbia.
DOI: 10.3390/mi11030253
ISSN: 2072-666X
WoS: 000613507100001
Scopus: 2-s2.0-85082854191
Institucija/grupa
IHTMTY - JOUR AU - Smiljanić, Milče M. AU - Lazić, Žarko AU - Jović, Vesna AU - Radjenović, Branislav AU - Radmilović-Radjenović, Marija PY - 2020 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/3490 AB - This paper presents etching of convex corners with sides along <n10> and <100> crystallographic directions in a 25 wt% tetramethylammonium hydroxide (TMAH) water solution at 80 °C. We analyzed parallelograms as the mask patterns for anisotropic wet etching of Si (100). The sides of the parallelograms were designed along <n10> and <100> crystallographic directions (1 < n < 8). The acute corners of islands in the masking layer formed by <n10> and <100> crystallographic directions were smaller than 45°. All the crystallographic planes that appeared during etching in the experiment were determined. We found that the obtained types of 3D silicon shape sustain when n > 2. The convex corners were not distorted during etching. Therefore, no convex corner compensation is necessary. We fabricated three matrices of parallelograms with sides along crystallographic directions <310> and <100> as examples for possible applications. Additionally, the etching of matrices was simulated by the level set method. We obtained a good agreement between experiments and simulations. PB - MDPI T2 - Micromachines T1 - Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C VL - 11 IS - 3 SP - 253 DO - 10.3390/mi11030253 ER -
@article{ author = "Smiljanić, Milče M. and Lazić, Žarko and Jović, Vesna and Radjenović, Branislav and Radmilović-Radjenović, Marija", year = "2020", abstract = "This paper presents etching of convex corners with sides along <n10> and <100> crystallographic directions in a 25 wt% tetramethylammonium hydroxide (TMAH) water solution at 80 °C. We analyzed parallelograms as the mask patterns for anisotropic wet etching of Si (100). The sides of the parallelograms were designed along <n10> and <100> crystallographic directions (1 < n < 8). The acute corners of islands in the masking layer formed by <n10> and <100> crystallographic directions were smaller than 45°. All the crystallographic planes that appeared during etching in the experiment were determined. We found that the obtained types of 3D silicon shape sustain when n > 2. The convex corners were not distorted during etching. Therefore, no convex corner compensation is necessary. We fabricated three matrices of parallelograms with sides along crystallographic directions <310> and <100> as examples for possible applications. Additionally, the etching of matrices was simulated by the level set method. We obtained a good agreement between experiments and simulations.", publisher = "MDPI", journal = "Micromachines", title = "Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C", volume = "11", number = "3", pages = "253", doi = "10.3390/mi11030253" }
Smiljanić, M. M., Lazić, Ž., Jović, V., Radjenović, B.,& Radmilović-Radjenović, M.. (2020). Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C. in Micromachines MDPI., 11(3), 253. https://doi.org/10.3390/mi11030253
Smiljanić MM, Lazić Ž, Jović V, Radjenović B, Radmilović-Radjenović M. Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C. in Micromachines. 2020;11(3):253. doi:10.3390/mi11030253 .
Smiljanić, Milče M., Lazić, Žarko, Jović, Vesna, Radjenović, Branislav, Radmilović-Radjenović, Marija, "Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C" in Micromachines, 11, no. 3 (2020):253, https://doi.org/10.3390/mi11030253 . .