This paper presents etching of convex corners with sides along <n10> and <100> crystallographic directions in a 25 wt% tetramethylammonium hydroxide (TMAH) water solution at 80 °C. We analyzed parallelograms as the mask patterns for anisotropic wet etching of Si (100). The sides of the parallelograms were designed along <n10> and <100> crystallographic directions (1 < n < 8). The acute corners of islands in the masking layer formed by <n10> and <100> crystallographic directions were smaller than 45°. All the crystallographic planes that appeared during etching in the experiment were determined. We found that the obtained types of 3D silicon shape sustain when n > 2. The convex corners were not distorted during etching. Therefore, no convex corner compensation is necessary. We fabricated three matrices of parallelograms with sides along crystallographic directions <310> and <100> as examples for possible applications. Additionally, the etching of matrices was simulated by the level set ...method. We obtained a good agreement between experiments and simulations.
The authors acknowledge funding provided by the Institute of Chemistry, Technology and Metallurgy and the Institute of Physics Belgrade, through the grant by the Ministry of Education, Science and Technological Development of the Republic of Serbia.
TY - JOUR
AU - Smiljanić, Milče M.
AU - Lazić, Žarko
AU - Jović, Vesna
AU - Radjenović, Branislav
AU - Radmilović-Radjenović, Marija
PY - 2020
UR - https://cer.ihtm.bg.ac.rs/handle/123456789/3490
AB - This paper presents etching of convex corners with sides along <n10> and <100> crystallographic directions in a 25 wt% tetramethylammonium hydroxide (TMAH) water solution at 80 °C. We analyzed parallelograms as the mask patterns for anisotropic wet etching of Si (100). The sides of the parallelograms were designed along <n10> and <100> crystallographic directions (1 < n < 8). The acute corners of islands in the masking layer formed by <n10> and <100> crystallographic directions were smaller than 45°. All the crystallographic planes that appeared during etching in the experiment were determined. We found that the obtained types of 3D silicon shape sustain when n > 2. The convex corners were not distorted during etching. Therefore, no convex corner compensation is necessary. We fabricated three matrices of parallelograms with sides along crystallographic directions <310> and <100> as examples for possible applications. Additionally, the etching of matrices was simulated by the level set method. We obtained a good agreement between experiments and simulations.
PB - MDPI
T2 - Micromachines
T1 - Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C
VL - 11
IS - 3
SP - 253
DO - 10.3390/mi11030253
ER -
@article{
author = "Smiljanić, Milče M. and Lazić, Žarko and Jović, Vesna and Radjenović, Branislav and Radmilović-Radjenović, Marija",
year = "2020",
abstract = "This paper presents etching of convex corners with sides along <n10> and <100> crystallographic directions in a 25 wt% tetramethylammonium hydroxide (TMAH) water solution at 80 °C. We analyzed parallelograms as the mask patterns for anisotropic wet etching of Si (100). The sides of the parallelograms were designed along <n10> and <100> crystallographic directions (1 < n < 8). The acute corners of islands in the masking layer formed by <n10> and <100> crystallographic directions were smaller than 45°. All the crystallographic planes that appeared during etching in the experiment were determined. We found that the obtained types of 3D silicon shape sustain when n > 2. The convex corners were not distorted during etching. Therefore, no convex corner compensation is necessary. We fabricated three matrices of parallelograms with sides along crystallographic directions <310> and <100> as examples for possible applications. Additionally, the etching of matrices was simulated by the level set method. We obtained a good agreement between experiments and simulations.",
publisher = "MDPI",
journal = "Micromachines",
title = "Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C",
volume = "11",
number = "3",
pages = "253",
doi = "10.3390/mi11030253"
}
Smiljanić, M. M., Lazić, Ž., Jović, V., Radjenović, B.,& Radmilović-Radjenović, M.. (2020). Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C. in Micromachines
MDPI., 11(3), 253.
https://doi.org/10.3390/mi11030253
Smiljanić MM, Lazić Ž, Jović V, Radjenović B, Radmilović-Radjenović M. Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C. in Micromachines. 2020;11(3):253.
doi:10.3390/mi11030253 .
Smiljanić, Milče M., Lazić, Žarko, Jović, Vesna, Radjenović, Branislav, Radmilović-Radjenović, Marija, "Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C" in Micromachines, 11, no. 3 (2020):253,
https://doi.org/10.3390/mi11030253 . .
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