Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C
AuthorsSmiljanić, Milče M.
Article (Published version)
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This paper presents etching of convex corners with sides along <n10> and <100> crystallographic directions in a 25 wt% tetramethylammonium hydroxide (TMAH) water solution at 80 °C. We analyzed parallelograms as the mask patterns for anisotropic wet etching of Si (100). The sides of the parallelograms were designed along <n10> and <100> crystallographic directions (1 < n < 8). The acute corners of islands in the masking layer formed by <n10> and <100> crystallographic directions were smaller than 45°. All the crystallographic planes that appeared during etching in the experiment were determined. We found that the obtained types of 3D silicon shape sustain when n > 2. The convex corners were not distorted during etching. Therefore, no convex corner compensation is necessary. We fabricated three matrices of parallelograms with sides along crystallographic directions <310> and <100> as examples for possible applications. Additionally, the etching of matrices was simulated by the level set ...method. We obtained a good agreement between experiments and simulations.
Keywords:No convex corner compensation / Parallelogram / Silicon / Wet etching / Tetramethylammonium hydroxide (TMAH)
Source:Micromachines, 2020, 11, 3, 253-
- The authors acknowledge funding provided by the Institute of Chemistry, Technology and Metallurgy and the Institute of Physics Belgrade, through the grant by the Ministry of Education, Science and Technological Development of the Republic of Serbia.