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dc.creatorSarajlić, Milija
dc.creatorRamović, R.
dc.date.accessioned2019-01-30T17:16:17Z
dc.date.available2019-01-30T17:16:17Z
dc.date.issued2007
dc.identifier.issn0255-5476
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/347
dc.description.abstractElectron mobility for the silicon-based devices is one of the most important parameters, which determine the behavior of components. Mobility depends on silicon purity, doping level, presence of lattice defects and electric field in the particular device. These influences are particularly important for the nano-scaled devices since it is much more difficult to control the thickness of the active layer, uniformity of impurity doping and appearance of parasitic bipolar devices and capacitances. We have investigated a relationship between the electron mobility for the silicon based PD (Partially Depleted) SOI (Silicon On Insulator) NMOS (n-type Metal Oxide Semiconductor) Devices and the related kink effect, which appears as a consequence of the charge accumulation at the interface of the Buried Oxide. We relate PD SOI NMOS Device technology parameters to the kink effect and we propose a guiding line for alleviating this effect.en
dc.rightsrestrictedAccess
dc.sourceMaterials Science Forum
dc.subjectImpact ionizationen
dc.subjectKink effecten
dc.subjectParasitic bipolar deviceen
dc.subjectSOIen
dc.subjectSOI MOSFETen
dc.titleN-type silicon electron mobility and its relationship to the kink effect for nano-scaled SOI NMOS devicesen
dc.typeconferenceObject
dc.rights.licenseARR
dcterms.abstractСарајлић, Милија; Рамовић, Р.;
dc.citation.volume555
dc.citation.spage153
dc.citation.epage158
dc.citation.other555: 153-158
dc.citation.rankM23
dc.identifier.doi10.4028/www.scientific.net/MSF.555.153
dc.identifier.rcubConv_4129
dc.identifier.scopus2-s2.0-38349078602
dc.identifier.wos000249653700024
dc.type.versionpublishedVersion


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