dc.creator | Matovic, J. | |
dc.creator | Adamovic, N. | |
dc.creator | Jakšić, Zoran | |
dc.creator | Schmid, U. | |
dc.date.accessioned | 2019-10-25T12:11:31Z | |
dc.date.available | 2019-10-25T12:11:31Z | |
dc.date.issued | 2010 | |
dc.identifier.issn | 18777058 | |
dc.identifier.uri | https://cer.ihtm.bg.ac.rs/handle/123456789/3178 | |
dc.description.abstract | We demonstrated a field effect transistor based on the modulation of the proton flow in confined water-containing nanochannels. The device resembles an MOSFET transistor with the difference that the charge carriers here are ions (i.e. protons) instead of electrons. The effective cross-section of the conductive channels in the transistor is defined by the intensity of the electrical double layer and by the potential applied to the transistor gate. | en |
dc.publisher | Elsevier | en |
dc.relation | info:eu-repo/grantAgreement/EC/FP7/228943/EU// | |
dc.rights | openAccess | |
dc.rights.uri | https://creativecommons.org/licenses/by-nc-nd/4.0/ | |
dc.source | Procedia Engineering | en |
dc.subject | Nanofluidic | |
dc.subject | Proton transport | |
dc.subject | Field effect transistor | |
dc.title | Field effect transistor based on protons as charge carriers | en |
dc.type | conferenceObject | en |
dc.rights.license | BY-NC-ND | |
dcterms.abstract | Матовиц, Ј.; Сцхмид, У.; Јакшић, З.; Aдамовиц, Н.; | |
dc.rights.holder | Elsevier | |
dc.citation.volume | 5 | |
dc.citation.spage | 1368 | |
dc.citation.epage | 1371 | |
dc.description.other | Proc. Eurosensors XXIV, September 5-8, 2010, Linz, Austria | |
dc.identifier.doi | 10.1016/j.proeng.2010.09.369 | |
dc.identifier.fulltext | https://cer.ihtm.bg.ac.rs/bitstream/id/14459/1-s2.0-S1877705810009161-main.pdf | |
dc.identifier.scopus | 2-s2.0-78650620368 | |
dc.identifier.wos | 000287162400337 | |
dc.type.version | publishedVersion | |