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dc.creatorMatovic, J.
dc.creatorAdamovic, N.
dc.creatorJakšić, Zoran
dc.creatorSchmid, U.
dc.date.accessioned2019-10-25T12:11:31Z
dc.date.available2019-10-25T12:11:31Z
dc.date.issued2010
dc.identifier.issn18777058
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/3178
dc.description.abstractWe demonstrated a field effect transistor based on the modulation of the proton flow in confined water-containing nanochannels. The device resembles an MOSFET transistor with the difference that the charge carriers here are ions (i.e. protons) instead of electrons. The effective cross-section of the conductive channels in the transistor is defined by the intensity of the electrical double layer and by the potential applied to the transistor gate.
dc.publisherElsevier BVen
dc.relationinfo:eu-repo/grantAgreement/EC/FP7/228943/EU//
dc.rightsopenAccess
dc.sourceProcedia Engineeringen
dc.subjectNanofluidic
dc.subjectProton transport
dc.subjectField effect transistor
dc.titleField effect transistor based on protons as charge carriersen
dc.typeconferenceObjecten
dc.rights.licenseBY-NC-ND
dcterms.abstractМатовиц, Ј.; Сцхмид, У.; Јакшић, З.; Aдамовиц, Н.;
dc.rights.holderElsevier
dc.citation.volume5
dc.citation.spage1368
dc.citation.epage1371
dc.description.otherProc. Eurosensors XXIV, September 5-8, 2010, Linz, Austria
dc.identifier.doi10.1016/j.proeng.2010.09.369
dc.identifier.fulltexthttp://cer.ihtm.bg.ac.rs/bitstream/id/14459/1-s2.0-S1877705810009161-main.pdf
dc.identifier.scopus2-s2.0-78650620368
dc.identifier.wos000287162400337
dc.type.versionpublishedVersion


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