Field effect transistor based on protons as charge carriers
Конференцијски прилог (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
We demonstrated a field effect transistor based on the modulation of the proton flow in confined water-containing nanochannels. The device resembles an MOSFET transistor with the difference that the charge carriers here are ions (i.e. protons) instead of electrons. The effective cross-section of the conductive channels in the transistor is defined by the intensity of the electrical double layer and by the potential applied to the transistor gate.
Кључне речи:
Nanofluidic / Proton transport / Field effect transistorИзвор:
Procedia Engineering, 2010, 5, 1368-1371Издавач:
- Elsevier
Финансирање / пројекти:
- MULTIPLAT - Biomimetic Ultrathin Structures as a Multipurpose Platform for Nanotechnology-Based Products (EU-FP7-228943)
Напомена:
- Proc. Eurosensors XXIV, September 5-8, 2010, Linz, Austria
DOI: 10.1016/j.proeng.2010.09.369
ISSN: 18777058
WoS: 000287162400337
Scopus: 2-s2.0-78650620368
Институција/група
IHTMTY - CONF AU - Matovic, J. AU - Adamovic, N. AU - Jakšić, Zoran AU - Schmid, U. PY - 2010 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/3178 AB - We demonstrated a field effect transistor based on the modulation of the proton flow in confined water-containing nanochannels. The device resembles an MOSFET transistor with the difference that the charge carriers here are ions (i.e. protons) instead of electrons. The effective cross-section of the conductive channels in the transistor is defined by the intensity of the electrical double layer and by the potential applied to the transistor gate. PB - Elsevier C3 - Procedia Engineering T1 - Field effect transistor based on protons as charge carriers VL - 5 SP - 1368 EP - 1371 DO - 10.1016/j.proeng.2010.09.369 ER -
@conference{ author = "Matovic, J. and Adamovic, N. and Jakšić, Zoran and Schmid, U.", year = "2010", abstract = "We demonstrated a field effect transistor based on the modulation of the proton flow in confined water-containing nanochannels. The device resembles an MOSFET transistor with the difference that the charge carriers here are ions (i.e. protons) instead of electrons. The effective cross-section of the conductive channels in the transistor is defined by the intensity of the electrical double layer and by the potential applied to the transistor gate.", publisher = "Elsevier", journal = "Procedia Engineering", title = "Field effect transistor based on protons as charge carriers", volume = "5", pages = "1368-1371", doi = "10.1016/j.proeng.2010.09.369" }
Matovic, J., Adamovic, N., Jakšić, Z.,& Schmid, U.. (2010). Field effect transistor based on protons as charge carriers. in Procedia Engineering Elsevier., 5, 1368-1371. https://doi.org/10.1016/j.proeng.2010.09.369
Matovic J, Adamovic N, Jakšić Z, Schmid U. Field effect transistor based on protons as charge carriers. in Procedia Engineering. 2010;5:1368-1371. doi:10.1016/j.proeng.2010.09.369 .
Matovic, J., Adamovic, N., Jakšić, Zoran, Schmid, U., "Field effect transistor based on protons as charge carriers" in Procedia Engineering, 5 (2010):1368-1371, https://doi.org/10.1016/j.proeng.2010.09.369 . .