Electron transit time through depletion layer of GaInAs pn junction

dc.creator	Smiljanić, Miloljub
dc.creator	Đurić, Zoran G.
dc.creator	Lazić, Žarko
dc.date.accessioned	2019-09-10T16:00:57Z
dc.date.available	2019-09-10T16:00:57Z
dc.date.issued	1989
dc.identifier.issn	0013-5194
dc.identifier.uri	https://cer.ihtm.bg.ac.rs/handle/123456789/3089
dc.description.abstract	Using an empirical formula for the electron velocity, the transist time through a Gao. 47Ino. 53As pn junction as a function of the applied voltage and other parameters is calculated. It is shown that a minimum transit time exists and that it can be used for modelling of the response time of a pin or avalanche photodiode made on an epitaxial Gao.47InO53As layer on InP substrate.	en
dc.publisher	Institution of Engineering and Technology (IET)	en
dc.rights	restrictedAccess
dc.source	Electronics Letters	en
dc.title	Electron transit time through depletion layer of GaInAs pn junction	en
dc.type	article	en
dc.rights.license	ARR
dcterms.abstract	Смиљанић, Милољуб; Дјурић, З.; Лазић, З.;
dc.rights.holder	Institution of Engineering and Technology
dc.citation.volume	25
dc.citation.issue	2
dc.citation.spage	150
dc.identifier.doi	10.1049/el:19890109
dc.identifier.scopus	2-s2.0-0024302313
dc.type.version	publishedVersion