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dc.creatorSmiljanić, Miloljub
dc.creatorĐurić, Zoran G.
dc.creatorLazić, Žarko
dc.date.accessioned2019-09-10T16:00:57Z
dc.date.available2019-09-10T16:00:57Z
dc.date.issued1989
dc.identifier.issn0013-5194
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/3089
dc.description.abstractUsing an empirical formula for the electron velocity, the transist time through a Gao. 47Ino. 53As pn junction as a function of the applied voltage and other parameters is calculated. It is shown that a minimum transit time exists and that it can be used for modelling of the response time of a pin or avalanche photodiode made on an epitaxial Gao.47InO53As layer on InP substrate.en
dc.publisherInstitution of Engineering and Technology (IET)en
dc.rightsrestrictedAccess
dc.sourceElectronics Lettersen
dc.titleElectron transit time through depletion layer of GaInAs pn junctionen
dc.typearticleen
dc.rights.licenseARR
dcterms.abstractСмиљанић, Милољуб; Дјурић, З.; Лазић, З.;
dc.rights.holderInstitution of Engineering and Technology
dc.citation.volume25
dc.citation.issue2
dc.citation.spage150
dc.identifier.doi10.1049/el:19890109
dc.identifier.scopus2-s2.0-0024302313
dc.type.versionpublishedVersion


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