Electron transit time through depletion layer of GaInAs pn junction

Smiljanić, Miloljub; Đurić, Zoran G.; Lazić, Žarko

doi:10.1049/el:19890109

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1989

Autori

Smiljanić, Miloljub
Đurić, Zoran G.

Lazić, Žarko

Članak u časopisu (Objavljena verzija)

Institution of Engineering and Technology

Metapodaci

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Apstrakt

Using an empirical formula for the electron velocity, the transist time through a Gao. 47Ino. 53As pn junction as a function of the applied voltage and other parameters is calculated. It is shown that a minimum transit time exists and that it can be used for modelling of the response time of a pin or avalanche photodiode made on an epitaxial Gao.47InO53As layer on InP substrate.

Izvor:
Electronics Letters, 1989, 25, 2, 150-

Izdavač:

Institution of Engineering and Technology (IET)

DOI: 10.1049/el:19890109

ISSN: 0013-5194

Scopus: 2-s2.0-0024302313

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	6

TY  - JOUR
AU  - Smiljanić, Miloljub
AU  - Đurić, Zoran G.
AU  - Lazić, Žarko
PY  - 1989
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3089
AB  - Using an empirical formula for the electron velocity, the transist time through a Gao. 47Ino. 53As pn junction as a function of the applied voltage and other parameters is calculated. It is shown that a minimum transit time exists and that it can be used for modelling of the response time of a pin or avalanche photodiode made on an epitaxial Gao.47InO53As layer on InP substrate.
PB  - Institution of Engineering and Technology (IET)
T2  - Electronics Letters
T1  - Electron transit time through depletion layer of GaInAs pn junction
VL  - 25
IS  - 2
SP  - 150
DO  - 10.1049/el:19890109
ER  -

@article{
author = "Smiljanić, Miloljub and Đurić, Zoran G. and Lazić, Žarko",
year = "1989",
abstract = "Using an empirical formula for the electron velocity, the transist time through a Gao. 47Ino. 53As pn junction as a function of the applied voltage and other parameters is calculated. It is shown that a minimum transit time exists and that it can be used for modelling of the response time of a pin or avalanche photodiode made on an epitaxial Gao.47InO53As layer on InP substrate.",
publisher = "Institution of Engineering and Technology (IET)",
journal = "Electronics Letters",
title = "Electron transit time through depletion layer of GaInAs pn junction",
volume = "25",
number = "2",
pages = "150",
doi = "10.1049/el:19890109"
}

Smiljanić, M., Đurić, Z. G.,& Lazić, Ž.. (1989). Electron transit time through depletion layer of GaInAs pn junction. in Electronics Letters
Institution of Engineering and Technology (IET)., 25(2), 150.
https://doi.org/10.1049/el:19890109

Smiljanić M, Đurić ZG, Lazić Ž. Electron transit time through depletion layer of GaInAs pn junction. in Electronics Letters. 1989;25(2):150.
doi:10.1049/el:19890109 .

Smiljanić, Miloljub, Đurić, Zoran G., Lazić, Žarko, "Electron transit time through depletion layer of GaInAs pn junction" in Electronics Letters, 25, no. 2 (1989):150,
https://doi.org/10.1049/el:19890109 . .