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dc.creatorTodorović, D. M.
dc.creatorSmiljanić, Miloljub
dc.creatorSarajlić, Milija
dc.creatorVasiljević-Radović, Dana
dc.creatorRanđelović, Danijela
dc.date.accessioned2019-09-10T15:53:48Z
dc.date.available2019-09-10T15:53:48Z
dc.date.issued2004
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/3088
dc.description.abstractThe effect of Ar plasma etching on the surface of Si was investigated by photoacoustic spectroscopy. The surface of Si sample (p-tip, 10 k/spl Omega/cm, 420 /spl mu/m) was treated with Ar plasma from 2 min to 80 min. Amplitude and phase PA spectra were measured in the energy range from 0.75 to 1.55 eV. The amplitude ratio and phase difference of photoacoustic signals of Si samples Ar plasma etched and incoming Si samples indicate existence of two surface energy states (the generation-recombination centers) at 0.31 and 0.99 eV.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.rightsrestrictedAccess
dc.sourceProceedings - 2004 24th International Conference on Microelectronics, MIEL 2004
dc.titlePhotoacoustic spectroscopy: investigation of sputter damage in Si surface by Ar plasma
dc.typeconferenceObject
dc.rights.licenseARR
dcterms.abstractСарајлић, М.; Тодоровиц, Д.М.; Смиљанић, Милољуб; Васиљевић-Радовић, Дана; Рандјеловић, Д.;
dc.rights.holderInstitute of Electrical and Electronics Engineers
dc.citation.volume2
dc.citation.spage429
dc.citation.epage432
dc.description.other24th International Conference on Microelectronics, MIEL 2004; Nis; Yugoslavia; 16 May 2004 through 19 May 2004
dc.identifier.doi10.1109/ICMEL.2004.1314853
dc.identifier.scopus2-s2.0-3142750513
dc.type.versionpublishedVersion


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