The effect of Ar plasma etching on the surface of Si was investigated by photoacoustic spectroscopy. The surface of Si sample (p-tip, 10 k/spl Omega/cm, 420 /spl mu/m) was treated with Ar plasma from 2 min to 80 min. Amplitude and phase PA spectra were measured in the energy range from 0.75 to 1.55 eV. The amplitude ratio and phase difference of photoacoustic signals of Si samples Ar plasma etched and incoming Si samples indicate existence of two surface energy states (the generation-recombination centers) at 0.31 and 0.99 eV.
Source:
Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004, 2004, 2, 429-432
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Note:
24th International Conference on Microelectronics, MIEL 2004; Nis; Yugoslavia; 16 May 2004 through 19 May 2004
TY - CONF
AU - Todorović, D. M.
AU - Smiljanić, Miloljub
AU - Sarajlić, Milija
AU - Vasiljević-Radović, Dana
AU - Ranđelović, Danijela
PY - 2004
UR - http://cer.ihtm.bg.ac.rs/handle/123456789/3088
AB - The effect of Ar plasma etching on the surface of Si was investigated by photoacoustic spectroscopy. The surface of Si sample (p-tip, 10 k/spl Omega/cm, 420 /spl mu/m) was treated with Ar plasma from 2 min to 80 min. Amplitude and phase PA spectra were measured in the energy range from 0.75 to 1.55 eV. The amplitude ratio and phase difference of photoacoustic signals of Si samples Ar plasma etched and incoming Si samples indicate existence of two surface energy states (the generation-recombination centers) at 0.31 and 0.99 eV.
PB - Institute of Electrical and Electronics Engineers (IEEE)
C3 - Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004
T1 - Photoacoustic spectroscopy: investigation of sputter damage in Si surface by Ar plasma
VL - 2
SP - 429
EP - 432
DO - 10.1109/ICMEL.2004.1314853
ER -
@conference{
author = "Todorović, D. M. and Smiljanić, Miloljub and Sarajlić, Milija and Vasiljević-Radović, Dana and Ranđelović, Danijela",
year = "2004",
url = "http://cer.ihtm.bg.ac.rs/handle/123456789/3088",
abstract = "The effect of Ar plasma etching on the surface of Si was investigated by photoacoustic spectroscopy. The surface of Si sample (p-tip, 10 k/spl Omega/cm, 420 /spl mu/m) was treated with Ar plasma from 2 min to 80 min. Amplitude and phase PA spectra were measured in the energy range from 0.75 to 1.55 eV. The amplitude ratio and phase difference of photoacoustic signals of Si samples Ar plasma etched and incoming Si samples indicate existence of two surface energy states (the generation-recombination centers) at 0.31 and 0.99 eV.",
publisher = "Institute of Electrical and Electronics Engineers (IEEE)",
journal = "Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004",
title = "Photoacoustic spectroscopy: investigation of sputter damage in Si surface by Ar plasma",
volume = "2",
pages = "429-432",
doi = "10.1109/ICMEL.2004.1314853"
}
Todorović, D. M., Smiljanić, M., Sarajlić, M., Vasiljević-Radović, D.,& Ranđelović, D. (2004). Photoacoustic spectroscopy: investigation of sputter damage in Si surface by Ar plasma.
Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004
Institute of Electrical and Electronics Engineers (IEEE)., 2, 429-432.
https://doi.org/10.1109/ICMEL.2004.1314853
Todorović DM, Smiljanić M, Sarajlić M, Vasiljević-Radović D, Ranđelović D. Photoacoustic spectroscopy: investigation of sputter damage in Si surface by Ar plasma. Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004. 2004;2:429-432
Todorović D. M., Smiljanić Miloljub, Sarajlić Milija, Vasiljević-Radović Dana, Ranđelović Danijela, "Photoacoustic spectroscopy: investigation of sputter damage in Si surface by Ar plasma" Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004, 2 (2004):429-432,
https://doi.org/10.1109/ICMEL.2004.1314853 .
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